International Business Machines Corporation

Donald R Thomas

John Richard Dangler

James Hsi-Tang Lee

Akella V Satya

Ashwin K Ghatalia

Nicholas Zapotoski

Aspects include receiving past performance data. Aspects also include collecting a set of observations about a live event. Aspects also include generating a stoppage time prediction based on the past performance data and the set of observations about the live event. Aspects also include generating an optimized content sequence based on the stoppage time prediction and a respective duration of each of a plurality of preexisting media files. The optimized content sequence includes a sequence of one or more media files of the plurality of preexisting media files.

Dynamically optimized stoppage time media content

A non-destructive read out memory cell system is provided having a semiconductor substrate supporting an array of memory cells each of which includes a field effect transistor having a source and a drain defining a channel region having high and low threshold sections. In a first embodiment the channel region is further defined by the upper surface of the semiconductor substrate, and in second and third embodiments the channel region is further defined by a V-groove and by a U-groove, respectively, formed in the substrate. A gate electrode separated from the surface of the semiconductor substrate by a thin insulating layer is disposed over the channel region. A storage node, preferably an N+ diffusion region, is located within the substrate adjacent to the high threshold section of the channel region. Pulsing means are provided for selectively charging and discharging the storage node and sensing means are provided to determine the flow of current passing through the channel region, which is representative of the binary information contained on the storage node.

Non-destructive read out field effect transistor memory cell system

A semiconductor defect monitoring structure employs a series of electrically testable serpentine stripe patterns having different widths and spacing in order to determine the distribution of the density of defects by size. Metal stripe patterns are superposed and rotated 90.degree. with respect to diffusion stripe patterns in a semiconductor wafer. A set of four field effect transistor devices are connected to each stripe pattern in such a way that tests may be made for all defects without interference between adjacent patterns. The defect monitoring structure helps to determine defects such as opens in diffusion and metallization, shorts in metallization, shorts in diffusion, pinholes in a thin oxide, and pinholes in a thick oxide.

Electrical defect monitor structure

Method and apparatus for measuring or determining characteristics, such as width and resistivity of a given conductive line, particularly a conductive line produced by integrated circuit technology. The conductive line, having a first width which is formed on an insulating medium is disposed in the vicinity of or adjacent to a second line having a second width different from the first width, which is also conductive and which is made by the same process by which the given conductive line was made. A common constant current is passed through the given conductive line and through the second line. A first voltage is measured between two points spaced apart by a given distance along the given conductive line and a second voltage is measured between two points spaced apart by the given distance along the second line. Characteristics, such as width and resistivity, of the given conductive line, as well as those of the second line, are then determined by utilizing relationships between the measured voltages and known line constants.

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Westford, VT, United States of America

Donald R Thomas