Xerox Corporation

Sdl Inc.

Spectra Diode Laboratories, Inc.

Jds Uniphase Corporation

Other

Donald R Scifres

William Streifer

Robert D Burnham

David F Welch

Robert G Waarts

David G Mehuys

Peter Cross

Robert Arthur Sprague

Robert J Lang

Steven Sanders

John G Endriz

Jo S Major

D Philip Worland

Thomas L Paoli

Stephen G Grubb

Thomas L Koch

Eric G Rawson

G A Connell

Jean-Luc Archambault

Amos A Hardy

Gary L Harnagel

William Streifer, Deceased

Raymond Zanoni

Ross A Parke

Randall S Geels

Julian S Osinski

Richard R Craig

Stephen O'Brien

Derek W Nam

Kenneth M Dzurko

David C Mundinger

David P Bour

Robert L Thornton

Vincent G Dominic

Mehrdad Ziari

Bardia Pezeshki

Edward C Vail

Edmund L Wolak

Stuart MacCormack

Josef Berger

David M Giltner

Fernando A Ponce

Neville Connell

Wolfgang E Stutius

Amos Hardy

Erik P Zucker

William J Gignac

David D Dawson

Ga Neville Connell

Jonas Webjorn

Robert B Burnham

Dan H Fekete

Jerome R Klein

D Phillip Worland

Hsing Kung

A vehicle with a plurality of individually addressable light sources, preferably semiconductor laser light sources or light emitting diodes, each of which produce a beam of light, are optically coupled to a fiber optic waveguide. The laser light sources are grouped together preferably at a single location within the vehicle for easy access and conveniently located within the vehicle. Fiber waveguides distally transmits the beams to the optical loads of the vehicle, including the brake lights, taillights, instrumentation lights and turn signals. Each fiber optic waveguide may be a single optical fiber, such as a multimode fiber, having a numerical aperture large enough to receive illumination from a plurality of light sources. In cases where some optical loads require a larger flux or brightness of light, such as vehicular headlights, which may greater than a single optic fiber can transmit, the waveguide may comprise of a bundle of optical fibers. Multiple light sources to a single optical output load allows switching to another operational light source or increase the intensity of remaining light sources should one light source fail. In this manner, the operational life of the vehicular lighting system is increased. Also disclosed is circuitry for operating applications of the system as well as illustrating the employment of color wavelength laser light sources.

Addressable vehicular lighting system

An improved interferometric modulator permits the reduction in size of optical transmitters. In one embodiment, the optical modulator includes amplifiers or attentuators as phase modulators. In another embodiment, two outputs from a combiner are fed to the modulator, thus avoiding the requirement for an input splitter in the modulator. Light passing through the modulator may be both phase-shifted and amplified or attenuated by optical regulator sections located in the modulator. In another embodiment, the transmitter is included as a multiple-wavelength optical communications source, where individual current sources are provided to actuate a number of light sources feeding into the combiner, a processor controls the operation of each light source, and a modulator driver receives a data input signal to be encoded on the output of the source. By combining a number of modulators, a gray scale modulator may be fabricated for producing a gray scale output, rather than a conventional binary level output.

Optimized interferometrically modulated array source

An infrared laser diode wireless local area network for communication between spatially dispersed terminals such as computers which may be located in a single room or in adjacent rooms. The lasers may be tuned to emit at varying frequencies for wavelength multiplexing, or a plurality of lasers each having a different output frequency can be connected with each terminal. A receiver connected to each terminal may similarly detect only a single narrow waveband or may detect a plurality of such wavebands. A transceiver may be employed for signal transmission between separate rooms. High speed data modulation of the carrier waves is provided with MOPA or similar lasers, and broad angular dispersion of the output is achieved by such lasers along with dispersive lenses.

Infrared laser diode wireless local area network

Optical pumping arrangements are provided for the broadband or multiple wavelength pumping of optical sources. Sources may be based on Raman gain media and may use multiple output couplers to couple out different wavelength ranges. Cascaded Raman resonator (CRR) configurations may also be used. Overlapping resonators at different wavelengths may be configured to share gain media, and may have separate portions in separate optical paths. Attenuation filters may also be used that are matched to the gain profile of a gain medium, to flatten the gain spectrum and allow equalization of gain to different output wavelengths. In one embodiment, polarization maintaining fiber is used to develop resonant conditions at different wavelengths in different polarization states. Wideband output gratings may be substituted for narrowband gratings to provide CRR configurations with a broader output band. Broadband amplification may also be provided by using a laser source operating in coherence collapse. The multiple wavelength pumping lends itself to a pumping arrangement in which sources at different wavelengths are combined into separate transmission/gain media such as the different fibers of an optical fiber cable.

Multiple wavelength optical sources

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-arsenide-nitride semiconductor materials

Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.

High power fiber gain media system achieved through power scaling via multiplexing

A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.

Semiconductor laser with integral spatial mode filter

A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.

Semiconductor gain medium with multimode and single mode regions

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-V arsenide-nitride semiconductor materials

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

III-V arsenide-nitride semiconductor

Growing community of inventors

San Jose, CA, United States of America

Donald R Scifres