Varian Associates, Inc.

Genus, Inc.

Iodep, Inc.

Donald R Boys

Walter E Graves, Jr

Frederick T Turner

Robert M Smith

A target structure is provided for use in a magnetically enhanced diode sputter coating source having a sputtering target which at end-of-life has an eroded surface with a known shape. The sputtering target has a non-sputtered profiled back surface conforming substantially in shape to the eroded surface at end-of-life. A backing plate is bonded to the sputtering target which has a bonding surface complementary to the non-sputtered back surface of the sputtering target and is designed to mate therewith. A method is provided for fabricating the target structure and bonding the sputtering target to the backing plate by isostatic pressing.

Composite sputtering target structures and process for producing such

A system for moving and processing workpieces includes individual stations isolated from one another and from a main chamber by seals formed by a transport mechanism. Workpieces are moved in a queue in a circular pattern, by a dial turret operated by a bell-crank and a Geneva mechanism. Stations seal to the baseplate from below, and a vacuum chamber encloses the turret assembly which operates on a post through a center hole in the baseplate. Workpieces loaded to one depended chamber are withdrawn from chambers and inserted into next chambers in a circular pattern, passing through the main chamber with each transfer, and ending back in the chamber where they were loaded. In an alternative embodiment passages between the main chamber and each individual chamber have valves allowing processing to take place without carriers attached to the turret being in the processing chambers. In another embodiment a single radial arm transfers one workpiece at a time, indexing in either direction, allowing workpieces withdrawn from one chamber to be placed in any other chamber. In other alternative embodiments automatic equipment for loading and unloading workpieces is provided with a single cassette air-lock and with in-line air locking for cassettes. Provision is made for a wide variety of processes to be performed, and processing can be from one or both sides of a workpiece.

Dial deposition and processing apparatus

A sputter coating source has separate annular targets spaced outwardly from each other around a central axis. Magnetic field generating means are provided to establish magnetic field lines over each target around an annular path. Each target has its own separate magnetic field generating means including an electromagnet having a separately controllable power supply whereby the strength of the magnetic field over each target may be separately controlled. The targets are electrically separated from each other, and each target has a separately controllable power supply whereby the plasma power for each target may be separately controlled. More than two separate targets may be employed, and the various targets may be positioned at different distances from the substrate. The targets may be made of magnetic material.

Sputter coating source having plural target rings

A composite sputtering target is provided which is constructed of a non-magnetic sputtering material bonded to a magnetic backing material. A magnetic field is provided through the backing material by a magnetic system, so that the backing material and magnetic system form a closed flux path. During sputtering the magnetic system is operated at a high enough field strength to saturate the backing plate. This saturation causes a fringing field over the non-magnetic target similar to that obtained with magnetic target systems. In another embodiment, the return path for magnetic flux beneath the target material is a permanent part of the magnetic system instead of being permanently attached to the target material as a backing for support.

Non-magnetic sputtering target

The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.

Apparatus for and method of controlling sputter coating

A system for handling and individually processing a plurality of thin substrates is described. The system includes a main chamber, entrance and exit load locks, a plurality of processing stations, a load lock load/unload means, a vertical transport means, and a horizontal transport means. In one embodiment the processing stations are deployed in a U-shaped configuration, allowing the entrance and exit load locks to be positioned at the same end of the machine. Idle stations between processing stations may also be employed. The substrates are vertically oriented and are raised and lowered into and out of load locks and processing stations by means of dedicated lift blades. Substrates are transferred within the main chamber from lift blades of one station to lift blades of an adjacent station by means of substrate carriers affixed to a walking beam mechanism. Substrates are transferred from the entrance load lock side of the machine to the exit load lock side by means of a reversing mechanism, which may be a rotating beam mechanism, or which may be a transverse motion mechanism which affects a rotationless substrate transfer. A lift blade symmetrically engages a substrate nearer the lower half of its periphery, holding the substrate securely with the aid of gravity, and negligibly obscuring or eclipsing either surface of the substrate. The lift blades carry the substrates into the processing stations and hold them in place during processing, or simultaneous processing of both sides of the substrates may be carried out.

Disk or wafer handling and coating system

A novel magnetron sputter coating source is disclosed in which magnetic sputter targets containing relatively large inventories of usable material may be employed. This coating source may also be used efficiently and effectively with sputter target materials having properties which range from nonmagnetic to highly ferromagnetic. Use of an electromagnetic coil with a widely adjustable energizing current, rather than permanent magnets, allows a wide range of magnetic properties to be accommodated. Electrical impedance of the glow discharge is readily controlled using the current flow through the electromagnetic coil, allowing, for example, operation at desired values of voltage and current throughout the life of the sputter target. In addition, a momentary increase in electromagnet coil current can be used to achieve ignition of the glow discharge at a desired sputter gas operating pressure which is below the sputter gas pressure at which the glow discharge can normally be readily ignited. Also, use of the electromagnetic coil permits an easy conversion of the magnetron sputter coating source to a nonmagnetic diode apparatus. The use of a Hall probe positioned adjacent and below the sputter target near the region of maximum erosion is disclosed. The Hall probe voltage, which is proportional to the magnetic field intensity at the Hall probe position, may be measured throughout sputter target life to provide an independent means of assessing the approach to end of useful life. A novel sputter target cooling means is disclosed in which a water chamber below the sputter target is divided into inlet and outlet portions by a septum. The flow of water through a narrow gap between the septum and the sputter target leads to highly effective heat transfer, which is also highly uniform along the peripheral path of intense heating of the sputter target.

Magnetron sputter coating source for both magnetic and non magnetic

Relatively wide workpieces, such as auto grilles, are rapidly conveyed into and from a vacuum processing chamber provided with entry and exit air locks and vacuum isolation valves, in which thin metallic coatings are deposited uniformly over workpiece surfaces. The gate member of the valve is supported for sliding vertical movement, as well as limited outward and inward movement for sealing the chamber opening, at the protruding ends of an elongated member backing the gate. Air cylinders act directly on these ends to close the gate. A linkage and air cylinder above the gate vertically propels the gate. The processing chamber is provided with several side by side arrays of sputtering sources with circular cathodes, the workpieces moving thereunder at a steady rate orthogonally to the arrays. The spacings of each source relative to the other in each array, the workpiece to source distance, and the degree of outboard placement of the outer sources relative to the workpiece edges are defined to provide both even coatings on horizontal workpiece surfaces, as well as on the vertical surfaces. A compact conveyor system with space-saving corner modules is coordinated with the valve action to maintain an even steady flow through the evacuated processing chamber for optimum coating.

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Cupertino, CA, United States of America

Donald R Boys