Applied Materials, Inc.

Varian Associates, Inc.

Donald M Mintz

Hiroji Hanawa

Dan Maydan

Avi Tepman

Dan A Marohl

Thomas Joseph Banholzer

Kenneth S Collins

Sasson Roger Somekh

Anantha K Subramani

David Datong Huo

Ted G Yoshidome

Lolita L Sharp

Haim Gilboa

Sasson Someskh

Humoyoun Talieh

The present invention generally provides an apparatus and method for improving the process of purging a liquid delivery system used in integrated circuit manufacturing. The liquid delivery system comprises ultrasonic transducers mounted to various components of a liquid delivery system. The transducers may be mounted on housings, isolation valves, fuel injectors, pump assemblies, fluid lines, and/or liquid flow meters. The ultrasonic transducers launch ultrasonic energy that enhance the removal of processing liquids and particulate material from components of the system. The present invention provides for a purge process where a purge fluid, preferably a liquid solvent, is flowed into the liquid delivery system and ultrasonic energy is launched into the purge fluid to enhance dissolution of residual processing liquids and particulate matter in the liquid delivery system, including from cracks and crevices in valves and other complex mechanical devices before being pumped from the liquid delivery system.

Ultrasonic enhancement for solvent purge of a liquid delivery system

A semiconductor fabrication equipment component which is exposed to a film layer fabrication environment exhibits a surface which is embossed with a pattern to provide an enhanced surface area for particle retention. The component is fabricatable using numerous embossing techniques, including knurling. The embossed surface provides the enhanced surface area without imposing a particle load on the treated part.

Embossed semiconductor fabrication parts

A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

High frequency semiconductor wafer processing apparatus and method

Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

Lid and door for a vacuum chamber and pretreatment therefor

A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

High-frequency semiconductor wafer processing apparatus and method

Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part to be cleaned ultrasonically in order to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

In a method for preparing a shield and/or clamping ring prior to use in a physical vapor deposition process, the shield and/or clamping ring is first bead blasted using an abrasive powder, then is treated in an ultrasonic cleaning chamber to remove loose particles and then sputter etched or treated with a plasma. The sputtering or plasma treatment serves to loosen contamination which may form a diffusion barrier and prevent the deposits from bonding to the shield and also serves to roughen the surface of the shield and/or clamping ring, to reduce interface voids and improve adhesion of sputtered material onto the shield and/or clamping ring. The process of the invention results in improved cleaning of the shield and/or clamping ring and improved adhesion of sputtered material thereon, thereby increasing the time before the shield/clamping ring must be cleaned and reducing down-time of the physical vapor deposition chamber.

Method for preparing a shield to reduce particles in a physical vapor

High-frequency semiconductor wafer processing method using a negative

In a method for preparing a shield for use in a physical vapor deposition process, the shield is sputter-etch cleaned to increase adhesion of deposits in the physical vapor deposition process. The sputter-etch cleaning serves to loosen contamination which may for a diffusion barrier and prevent the deposits from bonding to the shield. Also, the sputter-etch cleaning creates a high degree of micro-roughness. The roughness allows for an increase in nucleation sites which minimize the formation of interface voids. In addition to sputter-etch cleaning the shield may be bead blasted. The bead blasting makes the surface of the shield irregular. This enhances interface cracking of deposited material on a microscopic scale, resulting in less flaking.

An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.

Apparatus for manufacturing planarized aluminum films

Apparatus and method for manufacturing planarized aluminum films

A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a concave emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings.

Targets for magnetron sputter device having separate confining magnetic

A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a sloped emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings. A coil is formed behind the workpiece to act as a mirror to the plasma. The field of the coil moves the plasma away from the workpiece which permits putting high power R.F. bias on the workpiece. The R.F. bias in combination with gas heating the wafer from behind aids in sputtering a coating of superior conformality.

Magnetron sputter device having separate confining magnetic fields to

A cathode sputter magnetron device is controlled so that there is a uniformity of material supplied to workpieces over the lives of plural geometrically spaced targets from which material is sputtered. Each target is subjected to a separate plasma discharge that is confined to the associated target by a separate magnetic field. The relative powers of the separate plasma discharges are controlled so that the relative powers change as a function of target erosion condition. The impedances of the separate discharges are controlled by varying each separate magnetic field in response to variable currents applied to electromagnets.

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Sunnyvale, CA, United States of America

Donald M Mintz