University of California

Donald J Rej

Michael A Nastasi

Debra A Wrobleski

Kevin C Walter

Process for forming adherent coatings using plasma processing. Plasma Immersion Ion Processing (PIIP) is a process where energetic (hundreds of eV to many tens of keV) metallic and metalloid ions derived from high-vapor-pressure organometallic compounds in a plasma environment are employed to deposit coatings on suitable substrates, which coatings are subsequently relieved of stress using inert ion bombardment, also in a plasma environment, producing thereby strongly adherent coatings having chosen composition, thickness and density. Four processes are utilized: sputter-cleaning, ion implantation, material deposition, and coating stress relief. Targets are placed directly in a plasma and pulse biased to generate a non-line-of-sight deposition without the need for complex fixturing. If the bias is a relatively high negative potential (20 kV-100 kV) ion implantation will result. At lower voltages (50 V-10 kV), deposition occurs, and the extent of the surface modification can routinely be extended between 1 &mgr;m and 10 &mgr;m. By combining plasma based implantation and film deposition, coatings with greatly reduced stress are possible, allowing the ultimate coating thickness to be expanded to tens of microns.

Forming adherent coatings using plasma processing

A precursor composition adapted for neutron capture induced radiation treatment of said precursor composition including a polymer matrix containing dispersed dopant material, the dispersed dopant material characterized as capable of neutron capture whereupon subsequent in situ energetic ion irradiation of the polymer matrix can occur, and further characterized as dispersed so as to provide dopant domain sizes significantly less than the energetic ion range of the dopant material is provided. Also provided is a process of in situ irradiation of bulk polymeric articles by first providing a precursor composition adapted for neutron capture induced radiation treatment of the precursor composition including a polymer matrix containing dispersed dopant material, the dispersed dopant material characterized as dispersed so as to provide dopant domain sizes significantly less than the energetic ion range of the dopant material, and then exposing the precursor composition to a source of neutrons.

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Los Alamos, CA, United States of America

Donald J Rej