International Business Machines Corporation

Donald J Cook

Edward J Nowak

Minh H Tong

Robert J Gauthier, Jr

Hanyi Ding

Xuefeng Liu

Randy Lee Wolf

John A Watson

Edward S Hoyt

Harvey Clovis Allard

Harvey C Allard, Jr

Dain E Reinhart

Disclosed are test structures for radio frequency (RF) power stress and characterization. Each test structure incorporates a single device and is selectively operated in either a stress mode, during which the device is stressed under RF power, or in an analysis mode, during which the impact of the applied stress on the performance of the device is characterized. During the stress mode, an input RF power signal is applied to the device through an RF signal input port and an output RF power signal is captured from the device at an RF signal output port. Depending upon the impedance value of the device at issue, the RF signal input port and the RF signal output port are connected to either the same terminal or opposing terminals and the need for impedance tuning is avoided. Also disclosed are test systems and methods for selectively controlling operation of such a test structure.

Structure, system and method for device radio frequency (RF) reliability

A system ( ) for and method of testing a device under test (DUT) ( ) having a plurality of probe pads ( ) utilizing a dual probe technique to overcome contact resistance that may be present. The system comprises a plurality of sensing probes ( ) and a plurality of forcing probes ( ) arranged in pairs consisting of one sensing probe and one forcing probe. Each pair of sensing and forcing probes is provided for contacting one of the probe pads on the DUT. Each forcing probe is in electrical communication with a power supply ( ) via a switching matrix ( ), and each sensing probe is in electrical communication with a voltage meter ( ) via the switching matrix. During testing, at least one of the power supplies provides a voltage to a corresponding forcing probe in contact with a particular probe pad. The sensing electrode at that particular probe pad senses a voltage, which is measured by the voltmeter and is used by a feedback controller ( ) to adjust the voltage supplied by the corresponding power supply to the forcing probe.

System for and method of testing a microelectronic device using a dual probe technique

A method and apparatus for automated testing of a plurality of electrostatic discharge (ESD) devices on a wafer. The wafer has M padsets and N conductive pads on each padset, where m is at least 1, and n is at least 2, and each ESD device is conductively coupled to a unique plurality of pads of a padset of the M padsets. Testing sequences, under program control of a computer system, implement the testing of the ESD devices.

Automation of transmission line pulse testing of electrostatic discharge devices

A device, having circuits formed thereon, comprises a circuit including a frequency generator for generating a detectable radio frequency energy when powered and a power generator, coupled to the frequency generator, for generating power when exposed to light.

Contact-less probe of semiconductor wafers

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Essex Junction, VT, United States of America

Donald J Cook