USA as Represented by Secretary of the Navy

Peregrine Semiconductor Corporation

Donald J Albares

Ronald Eugene Reedy

Chen-Kuo Sun

Ching T Chang

James S Cable

Charles B Kuznia

Matthew N McLandrich

Richard Nguyen

Tri Q Le

Stephen Douglas Russell

Douglas A Sexton

Everett William Jacobs

Stephen A Pappert

David B Cavanaugh

Ching-Ten Chang

Richard Pommer

Thomas W Trask

Jay H Harris

Richard T Hagen

Mark Miscione

Richard C Eden

A method and apparatus for optically clocked optoelectronic track and hold ('OCOETH') device. The OCOETH device includes a diode bridge, input node, at least two current sources and at least two photodetectors. The input node is operatively coupled to the diode bridge and can receive an analog input signal. The at least two current sources are operatively coupled to the diode bridge and can forward bias the diode bridge. The at least two photodetectors are operatively coupled to the diode bridge and can receive an optical input clocking signal, and can reverse bias and forward bias the diode bridge in response to the optical input clocking signal. The hold capacitor is operatively coupled to the diode bridge and can track the analog input signal when the diode bridge is forward biased, and can hold the analog input signal when the diode bridge switches from forward biased to reverse biased.

Method and apparatus for an optically clocked optoelectronic track and hold device

An integrated circuit/optoelectronic packaging system () which comprises OE and IC components packaged to provide electrical input/output, thermal management, an optical window, and precise passive or mechanical alignment to external optical receivers or transmitters. A transparent insulating substrate having electrical circuitry in a thin silicon layer formed on its top side is positioned between the optical fiber and the optoelectronic device such that an optical path is described between the optoelectronic device and the optical fiber core through the transparent insulating substrate. The optoelectronic devices are mounted on the transparent insulating substrate in a precise positional relationship to guide holes in the substrate. The optical fibers are fixed in an optical fiber connector and are held in a precise positional relationship to guide holes in the connector. Alignment is accomplished with complementary guide pins that pass through guide holes in the fiber optic connector and in the transparent substrate.

Small-scale optoelectronic package

An optical-optoelectronic coupling structure comprising a flip-chip optoelectronic/ultrathin silicon-on-sapphire device mounted on a V-groove, optical-fiber-bearing carrier substrate, including light-reflective structures for launching light into the optical fiber core or transmitting light emitted by the optical fiber core to the optoelectronic device. The optical fiber may be immobilized in the V-groove using a curable resin adhesive characterized by a refractive index substantially similar to the refractive index of the optical fiber.

Coupled optical and optoelectronic devices, and method of making the same

An optoelectronic switch for switching an input signal comprises two PIN des connected in series with opposed polarity, an input signal choke connected to the PIN diodes for presenting a high impedance to the input signal and a low impedance to a PIN diode bias, and a photovoltaic cell connected to the PIN diodes and the input signal choke for generating the PIN diode bias to switch the PIN diodes between a substantially conductive state while the photovoltaic cell receives optical energy from a light source and a substantially non-conductive state while the photovoltaic cell does not receive optical energy from the light source.

Photovoltaic optoelectronic switch

A resonant driving circuit for a laser diode comprises an impulse generator for generating narrow output pulses, a delay line for generating a composite output of reflections of the output pulses from terminations of the transmission line, a laser diode for generating an optical output from the composite output, and a forward bias network to bias the laser diode.

High power narrow pulse laser diode circuit

The optoelectronic switch of the present invention comprises two PIN diodes onnected in series with opposed polarity having their intrinsic regions coupled to a light source for maintaining both diodes in the conductive state while the light source is on and in the non-conductive state while the light source is off.

Optically activated back-to-back PIN diode switch having exposed

A light stop having at least one appropriately laser textured surface assures the absorption of energy including laser emissions that impinge on the at least one surface to thereby inhibit reflected energy therefrom. Optionally, an improved emitter of energy is created by at least one appropriately laser textured surface having an increased surface area of emission to increase the emissive power of the surface to thereby provide improved conductive and radiative cooling. An improved absorber and emitter is fabricated by providing front side and backside textured surfaces. All these capabilities are provided in a variety of structural configurations.

Laser textured surface absorber and emitter

An optical system and method include a short coherence length edge, emitt LED, a fiber optic coupler probe, and a Michelson interferometer to measure the parameter of thickness of optical devices, such as thin silicon substrate samples and to characterize other parameters of optical waveguide devices such as absolute attenuation, effective refractive index, and changes in these parameters with the application of a modulation voltage or an external disturbance. The measurable thickness range from a few to hundreds of microns with a thickness precision exceeding 0.1 micron for a 10 micron sample. In situ localized measurements of samples in an etching chamber are obtainable to control processing and provide for thickness uniformity. Attenuation measurements for optical waveguides compare the values of interferogram maxima at the values of the reference arm path length to changes corresponding to one and two times the optical path length of the sample. Effective refractive index is determined by counting the number of fringes in the recorded interferogram between successive maxima. Changes in these parameters due to an external disturbance are measured by comparing the interferograms before and after. The sample stays in the system during all measurements which can also indicate the degree of coupling or interaction between simultaneous refractive index and absorption changes.

Method for characterization of optical waveguide devices using partial

An apparatus for a method for assuring the secure transmission of information between a transmitter and a receiver is fabricated along the lines of a Mach-Zehnder interferometer. Two, identical length single-mode fibers extend between the transmitter and receiver to act as transmission paths. Within the transmitter a coiled length of like single-mode fiber integrally extends from one of the fibers reaching from the transmitter to the receiver. Within the receiver a like length of like single-mode fiber integrally extends from the other end of the other fiber reaching from the transmitter to the receiver. A superradiant diode in the transmitter emits pulses of coherent wavetrains that are split and sent through the two lengths of fibers and their associated integrally connected coils. A detector in the receiver senses variations in the interference fringes when a modulator in the transmitter shifts in path length the coherent wavetrains in one of the fibers in accordance with the information desired to be transmitted. Because of the integrally extending coils in the transmitter and the receiver, an intruder to the system would be unable to find where the transmission paths are identical and hence would be unable to monitor the modulated interference fringe patterns.

Interferometric optical fiber data link

An aligned and spaced-apart end-on optical coupling is provided between the end of a single mode optical fiber and the emitting aperture of an edge-emitting diode mounted on a heat sink secured to a base. A V-shaped grooved semiconductor chip is mounted on the base a distance from the edge-emitting diode and a UV curable optical cement is applied in the V-shaped groove and on a lateral surface of the optical f

Edge-emitting diode-to-optical fiber coupling technique

A micromanipulator and UV curing adhesive allows a precise end-on coupling of an optical fiber to a film optical waveguide on a substrate. Such a coupling facilitates the optical processing of data on active or passive optoelectronic chips with the inherent advantages of parallel, high speed capability. After coarse

Optical fiber-to-channel waveguide coupler

An apparatus and method for improving VLSI and VHSIC system data transmission relies on a plurality of optoelectronic switches actuated by pulses from at least one light source, a laser. Differing lengths of optical fibers couple the pulsed light from the laser at different times to create a sequence of actuation light pulses for the plurality of optoelectronic switches each time the light source is pulsed. Thus the information appearing at a plurality of parallel data nodes is converted to serial form at an output bonding pad on the chip. Optionally, a similar pulsing of electrooptic switches coupled to an input bonding pad converts serial data to parallel form. Faster input and output switching times are provided, reliability and complexity are reduced, particularly as compared to off-chip coupling arrangements, and power consumption and dissipation are reduced.

Optoelectronic integrated circuit multiplex

An optical wavelength demultiplexer is fabricated as an integral part of an integrated circuit chip. A waveguide in a common substrate having a chirped diffraction grating receives a number of wavelengths of optically modulated data from a single mode fiber. The wavelengths are diffracted from the plane of the lines of the grating into discrete beams angles through the substrate and impinge on appropriately located photodetectors. Signals provided by the detectors are fed to and processed by other integrated circuitry also contained on the chip. The common transparent substrate such as fused silica, glass, sapphire, lithium niobate or lithium tantalate mount semiconductor films of Si, Ge, GaAs or quanternary alloys that have the detectors and other integrated circuitry that are created by conventional CVD techniques. The waveguide and appropriate chirp grating are formed by established deposition and photolithographic procedures ot assure the separation of as many as fifty discrete beams of as many different wavelengths and their projection onto a like number of photodetectors to provide for a heretofore unattainable degree of optical wavelength demultiplexing.

Integrated optical wavelength demultiplexer

A hydrophone remotely senses impinging acoustic energy. Light output from a laser is split and launched into a single-mode fiber which transmits it to an optical resonator at its end. The resonator is made up of a fixed fiber end having a dielectric coating and a movable mirror which is displaced in response to an incident acoustic signal. The acoustic signal displaces the mirror so that mirror movement modulates the intensity of the reflected beam which is transmitted back through the single-mode fiber and received at a detector. The frequency and magnitude of the reflected beam yield acoustic signal information.

Optical resonator single-mode fiber hydrophone

An improvement for a fiber interferometer gyro provides for greater rotation rate sensitivity. The gyro has a single mode fiber coiled about an identical area a great number of times. A single external laser sends pulses of energy which are split and passed in opposite directions through the coiled fiber and a pair of optical amplifiers inserted to amplify the energy pulses. This permits the length of the coiled fiber to be increased and, hence, provides for greater interferometer sensitivity.

Growing community of inventors

San Diego, CA, United States of America

Donald J Albares