International Rectifier Corporation

Infineon Technologies Americas Corp.

Donald He

Ritu Sodhi

Daniel Marvin Kinzer

Siddharth Kiyawat

Ling Ma

Kyle A Spring

Davide Chiola

Naresh Thapar

Ashita Mirchandani

Adam I Amali

Niraj Ranjan

Min Fang

A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.

Schottky integrated high voltage terminations and related HVIC applications

A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes are interrupted to permit the drift region to extend to the top of the die and receive a Schottky barrier metal and the source contact. The MOSFET and Schottky share the same drift region, and the pitch between base and source stripes is not changed to receive the Schottky structure.

Monolithic MOSFET and Schottky diode device

A trench power semiconductor device including a recessed termination structure.

Trench MOSFET technology for DC-DC converter applications

A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

Integrated fet and schottky device

Integrated FET and schottky device

A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.

Method for manufacturing a semiconductor device with a trench termination

Growing community of inventors

Redondo Beach, CA, United States of America

Donald He