Wilson Greatbatch Ltd.

Wilson Greatbatch Technologies, Inc.

Yosemite Investment, Inc.

Donald H Stephenson

Barry C Muffoletto

Ashish Shah

Neal N Nesselbeck

Rodney E Stringham

Martin D Cymerman

Kieth N Green

A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high-energy beam can be an ion beam from a high-energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.

Substrate having a modified native oxide layer for improved electrical conductivity

A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high energy beam can be an ion beam from a high energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.

Method for improving electrical conductivity of a metal oxide layer on a substrate utilizing high energy beam mixing

A sealed capacitor, which may be hermetic, having a generally flat, planar geometry, is described. The capacitor includes at least one electrode provided by a metallic substrate having a capacitive material contacted thereto. The coated substrate can provide at least one of the casing side walls itself or, be connected to the side wall. A most preferred form of the capacitor has the conductive substrate provided with the capacitive material formed from an ultrasonically generated aerosol.

Method for providing a hermetically sealed capacitor

An anodized pressed valve metal powder pellet is described. The anodized pellet is particularly useful as an anode in an electrolytic capacitor having an improved breakdown voltage. The anodized pellet is formed by periodically holding the pellet at a constant voltage and allowing the current to decay over a period of time, or by turning the formation power supply off altogether during the anodization process. Either way provides an opportunity for heated electrolyte to diffuse from the anodized pellet.

Anodized tantalum pellet for an electrolytic capacitor

A sealed capacitor, which may be hermetic, having a generally flat, planar geometry, is described The capacitor includes at least one electrode provided by a metallic substrate having a capacitive material contacted thereto. The coated substrate can provide at least one of the casing side walls itself or, be connected to the side wall. A most preferred form of the capacitor has the conductive substrate provided with the capacitive material formed from an ultrasonically generated aerosol.

Hermetically sealed capacitor

A tantalum electrolytic capacitor utilizes a tantalum liner in place of previously used silver liner thus permitting the capacitor to withstand a reverse dc voltage up to 3 VDC continuously with no serious degradation of electrical characteristics.

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Williamsville, NY, United States of America

Donald H Stephenson