General Electric Company

Ge Medical Systems Global Technology Company, LLC

Morpho Detection, Inc.

Donald E Castleberry

Michael C DeJule

Nabeel Agha Riza

Michael John Utschig

Ahmad Nadeem Ishaque

Thomas L Credelle

George E Possin

William Andrew Hennessy

Habib Vafi

Harold G Parks

William W Piper

Henri M Rougeot

Scott William Petrick

James Walter LeBlanc

Adrian Ivan

Dante E Piccone

Charles Adrian Becker

Kent Charles Burr

Peter Menditto

Virendra Vilas Gaikwad

Robert F Kwasnick

Douglas Albagli

Joseph Bendahan

Clifford Bueno

Clarence Lavere Gordon, Iii

Forrest Frank Hopkins

Mahadevan Balasubramaniam

William Robert Ross

Shashishekara Sitharamarao Talya

Richard Gordon Cronce

John E Bigelow

Wesley K Waldron

Bruce Courtney Campbell Amm

Matthew E Ellis

Jie Jiang

Elizabeth Lokenberg Dixon

Ajit Achuthan

Le Yan

Jacob Robert Bauer

Didier Albert Verot

Mark S Logan

Fred Kleytman

Shailendra Pramod Joshi

A cargo container inspection radiation detector apparatus is disclosed. The apparatus includes a support, and a plurality of area radiation detectors disposed upon the support arranged corresponding to a height of the cargo container, each area radiation detector comprising an active area defined by a matrix of pixels.

Cargo container inspection system and apparatus

A power system and method for supplying power to a wireless X-ray detector utilizes a detachable handle for a wireless X-ray detector. The handle carries a battery which, when the detachable handle is coupled to a wireless X-ray detector, provides the wireless X-ray detector with a mobile supply of power. A detachable handle charging station may recharge a plurality of detachable handles, providing a swappable supply of power for a wireless X-ray detector. Charging stations for such handles, or for entire detectors are also disclosed.

Battery powered X-ray detector power system and method

An imaging system is provided having an EMI shield configured to shield one or more imaging components. The EMI shield includes a first material having a first plurality of conductive elements integrally formed within a first nonconductive material and also includes a generally nonconductive exterior. A method is provided for shielding EMI in an imaging system. The method includes providing an EMI shielding enclosure that includes a first material having a first plurality of conductive elements disposed in a first non-conductive material, and a second material having a second plurality of conductive elements disposed in a second non-conductive material, wherein the first plurality of conductive elements engages the second plurality of conductive elements to form a conduction path. Another method for shielding EMI in an imaging system is provided, that includes providing an EMI shielding enclosure having a first material that has a non-conductive surface and a second EMI shielding material disposed on the non-conductive surface of the first material.

EMI shielding of digital x-ray detectors with non-metallic enclosures

A method for localizing optical emission is disclosed. The method involves identifying a first readout channel of a first pixellated photodetector array based on an impact of a first photon on the first pixellated photodetector array. The first photon is emitted by a scintillator unit of a scintillator array and the first readout channel corresponds to a column of one or more pixels of the first pixellated photodetector array. The method also involves identifying a second readout channel of a second pixellated photodetector array based on an impact of a second photon on the second pixellated photodetector array. The second photon is emitted by the scintillator unit and the second readout channel corresponds to a row of one or more pixels of the second pixellated photodetector array. The method further involves identifying the scintillator unit based on the first readout channel and the second readout channel.

Systems and methods to localize optical emission in radiation detectors

An x-ray detector is provided for use in imaging systems. The x-ray detector includes a detector subsystem configured to output electrical signals in response to reception of x-rays. The detector subsystem includes an imaging panel, a support layer and a low density core disposed between the imaging panel and the support layer.

Digital x-ray detectors

An x-ray detector is provided for use in imaging systems. The x-ray detector includes a detector subsystem configured to output electrical signals in response to reception of x-rays. The x-ray detector also includes a single-piece protective enclosure having at least one opening to receive the detector subsystem.

A method for identifying localized optical emission is disclosed. The method involves identifying a region, which corresponds to a plurality of scintillator units of a scintillator, on a position sensitive photodetector that is impacted by one or more photons. The method further involves identifying a readout channel of a pixellated photodetector array that corresponds to a pixel associated with a scintillator unit impacted by the one or more photons. The method, further involves, identifying the scintillator unit based on the region and the readout channel.

An anti-scatter grid for radiography includes a plurality of generally radiation absorbing elements and a plurality of generally non-radiation absorbing elements in which the generally non-radiation absorbing elements include a plurality of voids. Desirably, the non-radiation absorbing elements include an epoxy or polymeric material and a plurality of hollow microspheres. Disclosed is also an apparatus for forming an anti-scatter grid in which the apparatus includes a pivoting arm and surface for use in aligning a plurality of spaced-apart generally radiation absorbing elements relative to a radiation source.

Anti-scatter grid, method, and apparatus for forming same

A technique is provided for automatically initiating reset of a digital detector. Generally, a digital detector has an array of rows and columns of pixels, read out electronics and scan electronics, that are configured to generate and transmit signals based upon radiation impacting the detector. The technique incorporates an automatic reset circuit that provides state machines to implement a reset if no readout or scrub command is received within a set time interval, or if communication with a readout control circuit is not available. The technique also includes methods for monitoring inputs, and resetting the charge on the rows and columns of pixels.

Self cycling solid state X-ray detector

The present invention provides a process and apparatus for forming a high integrity imager device having a passivation layer disposed over a photosensor array, a passivation layer with an adhesion topography on its surface, and a scintillator layer disposed over the passivation layer such that the scintillator layer is coupled to the adhesion topography.

Method for enhancing scintillator adhesion to digital x-ray detectors

A method for detecting cut data lines in an imaging array having a detector including an array of pixels for measuring radiation, and a plurality of data line contacts is provided. The method includes the steps of initializing pixels of the imaging array which includes a plurality of data lines including at least one uncut data line and at least one cut data line, wherein each cut data line is electrically connected to at least one of the plurality of data line contacts and at least one uncommitted contact. The method further includes determining a signal level for the uncut data lines, measuring a signal level of each data line in the plurality of data lines, and determining a number of cut data lines and a number of uncut data lines by using the signal levels received from each data line in the plurality of data.

Methods and apparatus for automated repair detection of solid-state X-ray detectors

A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.

Method for fabrication of deep-diffused avalanche photodiode

A method of forming a planar photosensitive device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of p type wells in the block surrounded by a foundation of n type semiconductor material. Each p type well corresponds to an APD pixel and is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the p type material in the well and the n type material foundation. Each APD pixel further comprises depletion layer profile modification means such that the peak surface electric field of the p-n junction in each well is substantially less than the bulk electric field of the same p-n junction. One type of depletion layer profile modification means is an peripheral doped region of p material disposed around each respective well; an alternative depletion layer profile modification means is a respective isolation moat around each well so as to separate p type material in the well from n type material in the foundation except along a parallel plane segment of the p-n junction.

Method for fabricating planar avalanche photodiode array

A method of fabricating a high density thin film circuit includes the step of bonding a high density connector having a plurality of electrical connection lines with a wafer having a plurality of electrical contact pads arranged in a pattern with a pitch less than about 100 .mu.m so that an electrical coupling is formed between the wafer contact pads and connector electrical connection lines. The step of forming the electrical coupling comprises pyrolysis of an adhesive disposed between the high density connector and said wafer. The electrical coupling between the contact pads and electrical connection lines is formed by directing a laser beam on the area in which the electrical coupling is to be formed so as to cause thermal decomposition of the adhesive to form a conductive carbon material; portions of the wafer contact pads and the connector electrical connection lines are also welded to the conductive carbon material.

Method of fabricating thin film circuits with high density circuit

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Schenectady, NY, United States of America

Donald E Castleberry