Lg Electronics Inc.

Lg Semicon Co., Ltd.

Tes Co., Ltd

Sunbio2 Co. Ltd.

Jej Co., Ltd.

Don-Hee Lee

Seong-Moon Cho

Hong-Jae Lee

Jong-Hwan Kim

Chil-Keun Park

Woo-Pil Shim

Woo-Jin Lee

Sung-Yean Yoon

Young-Sam Jeon

Junbae Lee

Kwy-Ro Lee

Heon-Min Lee

Ki-Chang Song

Seh-Won Ahn

Jung-Heum Yun

Jeong Soo Lee

Ki Chang Song

Young-Joo Eo

Hak-Su Kim

The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Method for depositing protection film of light-emitting element

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Passivation film deposition method for light-emitting diode

The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization

A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.

Thin-film solar cell and method of manufacturing the same

The present invention relates to a gas concentrator, which produces concentrated gas by applying a pressure difference to adsorbent having selective adsorption property to specific gas from mixed gas and by separating the specific gas. According to the present invention, there is provided the gas concentrator, comprising a filter for filtering out impurities from the mixed gas; a plurality of adsorption beds containing the adsorbent for separating the specific gas from the mixed gas supplied via the filter and including a backflow prevention means formed on channels through which the separated gas is discharged therefrom; a small pipe for interconnecting the channels at production stages of the adsorption beds with each other to perform processes of cleaning and applying vacuum pressure to the adsorption beds; a vacuum pumping means which is connected to a channel for supplying the mixed gas to the adsorption beds and generates the pressure difference caused from a difference between the a vacuum pressure and a pressure of the mixed gas; a valve means comprising a channel base of a single body formed with channels respectively connected to the adsorption beds, the channel for supplying the mixed gas, and the vacuum pumping means, and solenoid drivers mounted in the channel base for switching the channels formed in the channel base in order to alternately apply the vacuum pressure and the pressure of the mixed gas to the adsorption beds; and a gas supplying means for controllably supplying the mixed gas supplied from the filter to the gas separated and produced from the adsorption beds and then supplying a target space with the gas of which flow rate and concentration is controlled.

Gas concentrator

A gas separation apparatus comprises: at least two absorption beds respectively including an absorbent for absorbing certain gas; at least two three-way valves respectively installed on conduits for respectively connecting the absorption beds and outside of the apparatus; and a pump respectively connected to each end of the absorption beds and the three-way valves, for discharging gas absorbed by the absorbent and gas that is not absorbed by the absorbent. Gas that is absorbed by the absorbent and gas that is not absorbed by the absorbent are discharged by the single pump, thereby having a simple structure and reducing an installation space and a fabrication cost.

Gas separation apparatus

The present invention relates a method for concentrating a gas by applying a pressure difference to an adsorbent and an apparatus therefor, and particularly, a method for producing an enriched gas in a large amount by introducing a continuous production into every step of the process focusing on productivity rather than concentration of the product gas and an apparatus therefor. The present invention relates to a method incorporating the vacuum swing adsorption method with the pressure swing adsorption method, particularly the rapid pressure swing adsorption method which can continuously produce a desired material in a depressurization step to improve recovery rate of the desired material and productivity and an apparatus therefor. The apparatus according to the present invention is advantageously applied in a small size machine rather than for industrial uses. Particularly, when applied in a small size oxygen concentrator, it can be used in electric home appliances, air conditioners and water purifier, as well as medical products.

Gas concentration method and its apparatus

Disclosed are X-ray masks exhibiting improved stability and reliability of the X-ray masks, and methods of making these masks. The X-ray masks include a membrane, an X-ray absorber pattern on the membrane, which is formed on a top side of a substrate, or an oxide layer between the membrane and the X-ray absorber pattern.

X-ray mask and its fabrication method

X-ray absorber in an X-ray mask and a method for manufacturing the same which includes a first layer of crystalline phase formed on a predetermined portion of the surface of a membrane and a second layer of amorphous phase formed on the first layer.

X-ray absorber in X-ray mask and method for manufacturing the same

An infrared sensing device includes a condensing lens for gathering an infrared ray from a human body, a guide unit for dividing a room to be monitored into a plurality of lateral and vertical zones and for guiding the infrared ray to a part of an infrared sensor unit corresponding to its direction, a housing for enclosing the condensing lens and guide unit to preclude dispersion of the incident infrared ray, an infrared sensor unit for sensing an infrared ray of a certain zone or infrared rays of a plurality of zones guided by the guide unit and housing, and a signal processing unit for amplifying an output signal of the infrared sensor unit, and for converting the applied signal into a digital signal and analyzing the digital signal.

Infrared sensing device and method

A method of fabricating an X-ray mask includes the steps of forming a membrane on a substrate, forming a first material on the membrane, implanting predetermined ions into the first material, planarizing the membrane by removing a part of the first material and membrane, forming an absorber on the membrane planarized and depositing a second material on the absorber, implanting predetermined ions into the second material, planarizing the absorber by removing a part of the second material and membrane, and patterning the absorber planarized to have a predetermined shape.

Method of fabricating X-ray mask

The present invention relates to a device for sensing the position of a human body using an infrared ray sensor including: a light focusing device for converging an infrared ray emitted from the human body; a guiding device for guiding only a predetermined direction infrared ray among the infrared rays converged by the light focusing device; an infrared ray sensing device for sensing the infrared ray received by the guiding device; a direction shifting device for shifting the sensing direction of the infrared ray sensing part up, down, right and left; a circuit device for amplifying the output of the infrared ray sensing device, A/D converting it and then driving the direction shifting device; and a determination device for determining the position, movement direction and the activity of a human body using an output signal of the circuit device and a driving timing of the direction shifting device.

Device for sensing position of human body using infrared sensor

A method of manufacturing a conductive micro bridge includes the steps of preparing a semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a sacrificial layer on the insulating film, forming a metal-oxide composite film on the sacrificial layer so as to surround the sacrificial layer, and removing the sacrificial layer to thereby form an air gap in the removed portion.

Growing community of inventors

Gyeonggi-do, South Korea

Don-Hee Lee