Advanced Micro Devices Corporation

Don A Tiffin

Tim Z Hossain

Franklin D Crawford, Jr

Roy Mark Miller

Bernd Maile

William S Brennan

Allen White

Cornelia A Weiss

Patrick L Smith

David Soza

It has been observed that Si introduced into an Al metal line of an Al, Ti, and Si-containing layer stack of an integrated circuit, at concentrations uniformly less than the solid solubility of Si in Al, results in a reduction in Al metal line voiding. Such voiding is a stress induced phenomenon and the introduction of Si appears to reduce stresses in the Al metal lines. By controlling Ti deposition conditions to achieve desired thickness and grain-size characteristics of the Ti underlayer, a self-regulating filter for introduction of Si into the Al metal layer is provided. Si is introduced into the Al metal layer by migration through a suitably deposited Ti layer, rather than during Al layer deposition. In this way Si is introduced into the Al and Al metal line voiding is reduced, while avoiding excess concentration of Si which can result in formation of Si precipitates in the Al metal lines, thereby avoiding related reductions metal line cross-sections and reducing electromigration-induced open circuit failures.

Thin titanium film as self-regulating filter for silicon migration into aluminum metal lines

For small angles that are near critical angle, a primary incident X-ray beam has excellent depth resolution. A series of X-ray fluorescence measurements are performed at varying small angles and analyzed for depth profiling of elements within a substrate. One highly useful application of the X-ray fluorescence measurements is depth profiling of a dopant used in semiconductor manufacturing such as arsenic, phosphorus, and boron. In one example, angles are be varied from 0.01&deg; to 0.20&deg; and measurements made to profile arsenic distribution within a semiconductor wafer. In one embodiment, measurements are acquired using a total reflection X-ray fluorescence (TXRF) type system for both known and unknown profile distribution samples. The fluorescence measurements are denominated in counts/second terms and formed as ratios comparing the known and unknown sample results. The count ratios are compared to ratios of known to unknown samples that are acquired using a control analytical measurement technique. In one example the control technique is secondary ion mass spectroscopy (SIMS) so that the count ratios from the TXRF-type measurements are compared to ratios of integrals of SIMS profiles. In another example, the TXRF-type measurement ratios are compared to simulation profiles of known samples. Integrals of the SIMS profile that vary as a function of depth into the substrate correspond to the grazing incidence angles of the TXRF-like measurement and respective count rates.

Depth profile metrology using grazing incidence X-ray fluorescence

An improved solder bump composition and method advantageously employs a thin low-alpha layer of lead (Pb) deposited in close proximity to alpha particle sensitive devices, while ordinary (i.e., low cost) Pb is used for the bulk of the solder bump. This approach allows for reduced overall cost while still providing protection from alpha-particle induced soft errors. The low-alpha layer reduces the flux of alpha particle into devices in two ways. First, the low-alpha layer is itself essentially Pb.sup.210 free and therefore alpha particle emissions from the low-alpha layer are negligible. Second, the low-alpha layer is substantially opaque to alpha particles emitted by the ordinary Pb which includes Pb.sup.210. As a result, sensitive circuits on a semiconductor chip employing the improved solder bump are shielded from alpha particle emissions of the low-cost Pb.sup.210 -containing portion of a solder bump.

Graded PB for C4 bump technology

An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of 'boron' bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles. Boron-10 is a major source of alpha particles formed in a nuclear reaction between boron-10 and cosmic ray neutrons.

Boron implanted dielectric structure

A neutron detecting semiconductor device and process for fabricating the same is provided. In one particular embodiment, a semiconductor device for detecting neutrons is formed by forming one or more memory cells on a substrate and forming a neutron-reactant material over the one or more memory cells. Upon reacting with a neutron, the neutron-reactant material emits one or more particles capable of inducing a state change in the one or more memory cells. The neutron-reactant material may be formed from a borophosphosilicate glass (BPSG) having a relatively high concentration of .sup.10 Boron. For example, the concentration .sup.10 Boron may range from 80 to 100 percent or 95 to 100 percent of the total Boron concentration in the BPSG material.

Neutron detecting semiconductor device

Graded PB for C4 pump technology

An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, by introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of boron bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles. Boron-10 is a major source of alpha particles formed in a nuclear reaction between boron-10 and cosmic ray neutrons.

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Austin, TX, United States of America

Don A Tiffin