Centre National De La Recherche Scientifique

Institut National Des Sciences Appliquees De Lyon

Mersen France Sb Sas

Consejo Superior De Investigaciones Cientificas

Universite Claude Bernard – Lyon1

Ecole Centrale De Lyon

Dominique Tournier

Franck Sarrus

Philippe Godignon

Florian Chevalier

Jean-François De Palma

Florent Balboni

Pierre Brosselard

José Millan

Thierry Rambaud

The invention pertains to a DC current interruption system able to open a DC line with inductive behavior, comprising a primary mechanical breaker (S), a secondary mechanical breaker (S) and an electronic overvoltage protection circuit (B, B) comprising at least one transistor. The DC current interruption system of the invention furthermore comprises an electronic opening system () comprising a passive circuit able to auto-bias the electronic protection circuit (B, B) upon the opening of said primary mechanical breaker (S), so as to trigger a switching of said at least one transistor (M, M, IG) making it possible to limit the voltage and the current in the DC line, total interruption of said DC line being obtained by subsequent opening of said secondary mechanical breaker (S).

DC current interruption system able to open a DC line with inductive behaviour

The invention concerns a method for producing a field effect transistor having a trench gate comprising: &#x2014;the forming () of at least one trench () in a semi-conductive substrate () having a first type of conductivity, said substrate comprising two opposing faces called front face and rear face, &#x2014;the primary implantation () of ions having a second type of conductivity so as to implant each trench of the substrate to form an active gate area, &#x2014;the depositing () of a layer of polycrystalline silicon having the second type of conductivity on the implanted active gate area, &#x2014;the oxidation () of the layer of polycrystalline silicon, and &#x2014;the metallization () of the substrate on the front and rear faces of same in order to form active source and drain areas.

Method of producing a junction field-effect transistor (JFET)

A system for supplying direct current and DC voltage is provided. The system comprise a first supply branch having a first DC voltage source and a power field-effect transistor of a current limiter which are connected in series, and a second supply branch having a second DC voltage source. The power transistor has a current/voltage characteristic with a first inverse polarization area without current limitation, and a second conduction area with current limitation based on a current threshold. The power field-effect transistor is connected to the first voltage source with an inverse polarization when the voltage source of the first branch is operating normally.

System for supplying direct current and DC voltage protected by a current limiter, and method for protecting same

The invention relates to a structure comprising an n-type substrate () having a bottom surface () and a top surface (), a drain (D) contacting the bottom surface () of the substrate (), a first n-type semiconductor region () having a top surface () provided with a contact area (), a source (S) contacting the contact area (), and a second p-type semiconductor region () arranged inside the first semiconductor region () and defining first and second conduction channels (C, C) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G, G), each of which has a portion () contacting the first semiconductor region () so as to form a Schottky junction.

Semiconductor structure for an electronic interruptor power switch

Growing community of inventors

Lyons, France

Dominique Tournier