Vermon S.a.

Vermon

Dominique Gross

Cyril Meynier

Nicolas Senegond

Nicolas Sénégond

Youngil Kim

Jacques Heller

An ultrasonic device, comprising an ultrasonic transducer () comprising: a membrane () suspended above a cavity () arranged on the upper surface side of a substrate (); a piezoelectric layer () attached to a surface of the membrane (); a first electrode (E) arranged on the lower surface side of the cavity (); and a second electrode (E) arranged on the upper surface side of the cavity (), in contact with the piezoelectric layer (), the device further comprising a control circuit (CTRL) connected to the first (E) and second (E) electrodes and capable of applying a first control voltage (VDC) on the first electrode (E), and a second control voltage (VAC) different from the first voltage on the second electrode (E).

Frequency-tunable ultrasonic device

The present disclosure relates to a CMUT transducer () comprising: a substrate () coated with a dielectric layer (); a cavity () formed in the dielectric layer (); a conductive or semiconductor membrane () suspended above the cavity (); and a dielectric coating () arranged on an upper surface of the substrate () at the bottom of the cavity or on a lower surface of the membrane at the top of the cavity and extending, in top view, on the most part of the surface of the cavity (), wherein the dielectric coating () is structured opposite the cavity ().

CMUT transducer

A capacitive micromachined ultrasonic transducer including a lower electrode, an upper electrode, and a membrane attached to the upper electrode and positioned between the lower electrode and the upper electrode. Anchors are connect to the membrane and the lower electrode such that a cavity is defined between the lower electrode and the membrane. One or more posts are positioned within the cavity, the posts partially buried within the membrane and extending towards the lower electrode. A method of producing a capacitive micromachined ultrasonic transducer includes forming an oxide growth layer on a device layer of undoped silicon and removing portions of the oxide growth layer to form anchors extending beyond the outer surface of the device layer and posts partially buried within post holes in the device layer and extending beyond the outer surface of the device layer.

Capacitive micromachined ultrasonic transducer and method of manufacturing the same

A method of manufacturing a capacitive micromachined ultrasonic transducer (CMUT) includes the steps of: a) forming a first dielectric layer on a first substrate; b) forming a second dielectric layer on a second substrate; c) forming a cavity in the first or second dielectric layer; d) assembling the first and second substrates by direct bonding of the surface of the second dielectric layer opposite to the second substrate to the surface of the first dielectric layer opposite to the first substrate; e) removing the second substrate to only keep above the cavity a suspended membrane formed by the second dielectric layer; and f) forming an upper electrode on the surface of the membrane opposite to the first substrate.

Method of manufacturing capacitive micromachined ultrasonic transducer (CMUT)

The present disclosure relates to a method of simultaneous manufacturing, from a same substrate (), at least one first CMUT transducer (I) having a first resonance frequency and at least one second CMUT transducer (II) having a second resonance frequency different from the first frequency, the method comprising the steps of: a) for each transducer (I, II), forming a cavity () on the upper surface side of the substrate, and forming a flexible membrane () suspended above the cavity (); b) forming a first layer () extending over a portion only of the upper surface of the membrane () of the first transducer (I) and which does not extend over the membrane () of the second transducer (II); and c) forming a second layer () extending over the entire upper surface of the membrane () of the first transducer and over the entire upper surface of the membrane of the second transducer.

Ultrasound transducer manufacturing method

The present disclosure relates to a CMUT transducer () comprising: —a conductive or semiconductor substrate () coated with a stack of one or a plurality of dielectric layers (); —a cavity () formed in said stack; —a conductive or semiconductor membrane () suspended above the cavity; —at the bottom of the cavity, a conductive region () in contact with the upper surface of the substrate, said conductive region being interrupted on a portion of the upper surface of the substrate; and—in the cavity, a stop structure () made of a dielectric material localized on or above the area of interruption of the conductive region ().

Growing community of inventors

Tours, France

Dominique Gross