Thomson-csf

Thales

Thomson Tubes Electroniques

Dominique Dieumegard

Didier Pribat

Pierre Legagneux

Jean-Philippe Schnell

Leonidas Karapiperis

Guy Garry

Louis Mercandalli

Georges Faillon

Michel Croset

Alfredo De Rossi

Christian Collet

Frédéric Andre

Ludovic Hudanski

Bernard Dessertenne

Christian Brylinski

Eric Minoux

Laurent Gangloff

Pierrick Guiset

In an optically controlled cold-cathode electron tube, the emitters, of nanometer and/or micron size and of elongate shape, have a structure comprising a first material () of sp2-bonding carbon type and a metallic second material (), said first material being in contact with and surrounding said second material at its top and over the entire length of the emitter or at least part of said length starting from its top toward the base (b). The second material has a plasma frequency substantially equal to or greater than the frequency of the optical control wave.

Optically controlled cold-cathode electron tube

The invention relates to an optically-controlled field-emission cathode, comprising a substrate () having at least one conducting surface () and at least one conducting emitter element () in the vicinity of a conducting surface, characterized in that it also comprises at least one photoconducting element () electrically connected in series between at least one emitter element and a conducting surface of the substrate. Another subject of the invention is an amplifier tube comprising such a cathode. The application is for Vacuum tubes, in particular for microwave amplification, with a view for example to applications in telecommunications.

Field-emission cathode, with optical control

A microwave modulable field-effect cathode which includes at least one array of emissive tips. A microwave modulation signal is produced by a device including a microwave-controllable semiconductor modulation element which is close to the tip array, and a short microline for conveying the modulation signal to the tip array. The microline provides impedance matching between the tip array and the semiconductor modulation element. Such a device can find application as a compact field-effect cathode, as one example.

Field emitter array with enhanced performance

Process for hardening active electronic components against ionizing

Method for the fabrication of field emission type sources, and

Disclosed is a device made of superconductive material wherein the superconducting layer is enclosed by at least one material which is a conductor of ions of one of the anionic constituent elements of the superconductive layer. This makes it possible to adjust the stoichiometry of the superconductive layer. The disclosure also concerns a method for adjusting the content of the constituent elements of the superconductive layer by electrolysis.

Device made of oxide superconductive material covered with ion

The invention provides a process comprising a step for depositing at least one intrinsic or doped monocrystalline silicon layer on a substrate, also monocrystalline, followed by a step for forming a thin silica layer at the level of the original substrate-silicon interface. The silica layer is obtained by oxidation through the substrate, followed by a heat treatment step during which the monocrystalline silicon is oxidized by the implanted oxygen ions. The first approach may take place according to two variants: thermal or plasma oxidation of the silicon-substrate interface. Oxidation takes place during the return to ambient temperature of the stack of layers after the deposit has been made.

Process for manufacturing a semi-conductor device of the type comprising

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Mareil-Marly, France

Dominique Dieumegard