U.S. Philips Corporation

Dominique Cecile Zulian

Alain Inard

Meindert Martin Lunenborg

Walter Jan August De Coster

Jean Claude Oberlin

Didier Levy

The invention relates to a method of forming an insulating zone ( ) around an active zone ( ) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone ( ) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone ( ) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.

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Saint Martin d'Heres, France

Dominique Cecile Zulian