Stmicroelectronics S.a.

Dominique Berger

Serge Pontarollo

Methods and apparatus according to various aspects of the present invention may operate in conjunction with a resistor formed of a lightly-doped P-type region formed in a portion of a lightly-doped N-type semiconductor well extending on a lightly-doped P-type semiconductor substrate, the well being laterally delimited by a P-type wall extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area at the limit between the well and the substrate and, horizontally, by a heavily-doped N-type wall. A diode may be placed between a terminal of the resistor and the heavily-doped N-type wall, the cathode of the diode being connected to said terminal.

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Voreppe, France

Dominique Berger