Hitachi Energy Ltd

Abb Power Grids Switzerland Ag

Abb Schweiz Ag

Abb Research Ltd.

Abb Technology Ag

Hitachi Energy Switzerland Ag

Dominik Truessel

Samuel Hartmann

Harald Beyer

Milad Maleki

Fabian Fischer

Lluis Santolaria

David Guillon

Daniel Schneider

Charalampos Papadopoulos

Niko Pavlicek

Roman Ehrbar

Robert Gade

Helder Mata

Georg Siroky

A power semiconductor component with power semiconductor modules connected to a cooling structure, and a cooling chamber having an inlet and outlet port, and adapted for a flow direction of a coolant substance from the inlet port to the outlet port, each of the cooling structures provided within the cooling chamber consecutively in the flow direction forming a flow resistance region in the cooling chamber, the cooling chamber comprises a bypass region connected in parallel to at least one of the flow resistance regions being closer to the inlet port, and is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.

Power semiconductor component

In one embodiment, a pre-product is configured for an electronic device intended to be loaded with a maximum current of at least 10 A, and comprises: an electronic component, a plurality of power terminals for external electrical contacting the electronic device, and a slide rail at an end of the at least one assigned power terminal remote from the electronic component. The power terminals are electrically connected to the electronic component and extend in a direction away from the electronic component. The slide rail is integrated in a metallic first leadframe together with at least one of the power terminals. A weight of the pre-product is at least 0.1 kg.

Pre-product, method and electronic device

A power module having an alignment part fixed on a lateral top surface (10T) of a semiconductor module component. The semiconductor module component has at least one terminal which—at least in places—is orientated vertically with respect to the lateral top surface of the semiconductor module component and for the purpose of alignment along lateral directions, is located at least partly within the at least one recessed portion. Along a vertical direction, the at least one terminalprotrudes beyond the at least one recessed portion. The at least one recessed portion is located on a side surface of the alignment part, wherein the at least one recessed portion is a vertical slot being an open recess on the side surface of the alignment part, and wherein the slot is not a through-hole being completely surrounded by inner walls of the at least one recessed portion in lateral directions.

Power module comprising a semiconductor module component and an alignment part, and method for forming the power module

A cooling assembly includes a first cooler part having an opening and an attachment point arranged on a first side of the first cooler part. The opening is configured to receive an integrated cooling structure of a corresponding semiconductor module that includes a baseplate to be attached to the attachment point on the first side of the first cooler part. A second cooler part is arranged on an opposite, second side of the first cooler part. The first cooler part and the second cooler part are made from a fiber reinforced polymer material and are joined so as to form a cavity for a coolant between the second side of the first cooler part and the second cooler part.

Power semiconductor module with injection-molded or laminated cooler assembly

A clamping element () is specified configured to be pressed to a baseplate () of at least one power semiconductor module () comprising a mold (), comprising —at least one contact area () being configured to be in direct contact to at least one clamping area () of the baseplate () being free of the mold (), and —at least one recess () provided in the baseplate, wherein —the recess () and the contact area () are configured to face the baseplate. Further, a method for producing a power semiconductor device is specified.

Clamping element and method for producing a power semiconductor device

A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.

Power semiconductor module with baseplate and heat dissipating element

A power semiconductor module includes a housing accommodating a power circuit with at least one power semiconductor chip, the housing providing at least two power terminals; a printed circuit board mounted to the housing and electrically connected to the power circuit for distributing auxiliary signals; and at least one auxiliary terminal mounted to the printed circuit board with a press-fit connection provided by a body of the auxiliary terminal.

Power semiconductor module

Power semiconductor module, including a base plate with at least one substrate located on the base plate, wherein an electronic circuit is provided on the at least one substrate, wherein located on the at least one substrate are electrical connectors comprising a DC+ power terminal, a DC&#x2212; power terminal and an AC power terminal and further a control connector, wherein the power semiconductor module is designed as a half-bridge module including a first amount of switching power semiconductor devices and a second amount of switching power semiconductor devices, wherein the base plate includes a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such, that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being arranged opposite to the first side, wherein the DC+ power terminal, the DC&#x2212; power terminal, the AC power terminal and the control connector are positioned in the contact area, wherein the first amount of switching power semiconductor devices is positioned in the first device area and wherein the second amount of switching power semiconductor devices is positioned in the second device area, wherein all the power semiconductor devices in the first device area are located in two parallel lines being aligned parallel to the width of the base plate and wherein all the power semiconductor devices in the second device area are located in two parallel lines being aligned parallel to the width of the base plate.

A housing of a power module includes: an encasing for encasing semiconductor elements inside the housing; a power terminal area on the encasing, on which a power terminal plate is provided; an auxiliary terminal area on the encasing at a lower level than the power terminal area; and an interconnecting member with a power terminal connector part and an auxiliary terminal connector part interconnected by a spring part, the spring part is aligned besides the power terminal plate; the interconnecting member is inserted with the power terminal connector part through an opening in the encasing below the power terminal plate, such that the spring part engages the power terminal area besides the power terminal plate and runs to the auxiliary terminal area and the auxiliary terminal connector part is disposed on the auxiliary terminal area.

Interconnecting member for power module

The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.

An electrical conductor includes a primary electrical contact, at least one secondary electrical contact, and a connection element. The connection element electrically connects the first and the at least one secondary electrical contacts, and includes at least one plate-like region. Each plate-like region includes at least one deflection component with at least one first and at least one second pivot, wherein the first and second pivots of each deflection means are arranged such that each secondary electrical contact is movable relative to the primary electrical contact in a deflection direction, without creation of a shear force.

Electrical conductor

A semiconductor module includes a base plate, at least one semiconductor chip mounted on the base plate, a case fixed to the base plate and surrounding the at least one semiconductor chip, an electrically insulating gel layer covering the at least one semiconductor chip, a thermosetting resin layer formed on top of the gel layer, and a lid formed on top of the thermosetting resin layer. The lid comprises a lid-extension, which defines a lid-opening. The lid-opening extends through the thermosetting resin layer to the gel layer and allows gel of the gel layer to expand into the lid-opening.

Growing community of inventors

Bremgarten, Switzerland

Dominik Truessel