Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Dominik Scholz

Alexander F Pfeuffer

Isabel Otto

Norwin Von Malm

Michael Schumann

Dominik Schulten

Christoph Schwarzmaier

Siegfried Herrmann

Stefan Illek

Lutz Hoeppel

Ion Stoll

Simeon Katz

Guido Weiss

Sophia Huppmann

Nicole Heitzer

Lutz Höppel

Martin Rudolf Behringer

Christian Leirer

Joachim Hertkorn

Patrick Rode

Andreas Ploessl

Britta Göötz

Martin Strassburg

Andreas Plössl

Martin Mandl

Juergen Moosburger

Barbara Huckenbeck

Peter Nagel

Marcus Zenger

Christian Mueller

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

Method for producing an optoelectronic component, and optoelectronic component

An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

Optical distance measuring apparatus and method for operating an optical distance measuring apparatus

An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

Assembly for lighting and recording a scene

An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.

Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

An arrangement having a plurality of lighting modules and a method for producing an arrangement having a plurality of lighting modules are disclosed. In an embodiment an arrangement includes a plurality of lighting modules held by a carrier, each lighting module having a plurality of optoelectronic components arranged in a first number of rows and a second number of columns, wherein the lighting modules include a respective first number of first electrodes and a respective second number of second electrodes, wherein the optoelectronic components of a respective row of the rows are electrically connected to one of the first electrodes of the respective lighting module, wherein the optoelectronic components of a respective column of the columns are electrically connected to one of the second electrodes of the respective lighting module, and wherein the carrier includes one third electrode per row and one fourth electrode per column, the electrodes being electrically contactable in each case from outside the carrier.

Arrangement comprising a plurality of lighting modules and method for producing an arrangement comprising a plurality of lighting modules

A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.

Semiconductor component and method for producing a semiconductor component

A display device is disclosed. In an embodiment a display device having a plurality of pixels separately operable from each other includes a semiconductor layer sequence including a first semiconductor layer, an active layer and a second semiconductor layer, a first contact structure contacting the first semiconductor layer and a second contact structure contacting the second semiconductor layer and at least one separating region extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, wherein the semiconductor layer sequence and the first contact structure have at least one first recess laterally adjacent with respect to a respective pixel, the first recess extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure includes second contacts extending through the at least one first recess.

Display device with a plurality of separately operable pixels formed in a grid

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Method of producing a semiconductor component

A method for producing a semiconductor chip and a semiconductor chip are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is formed as a p-conducting semiconductor region and the second semiconductor layer is formed as an n-conducting semiconductor region, or vice versa, forming at least one recess in the semiconductor layer sequence so that side surfaces of the first and second semiconductor layers are exposed, wherein the recess is multiple times wider than deep and applying an auxiliary layer for electrically contacting the second semiconductor layer, wherein the auxiliary layer at the side surfaces exposed.

Method for producing a semiconductor chip and semiconductor chip

The invention relates to a method for producing a plurality of components (), wherein a carrier composite () is provided with a coherent base body () and a wafer composite () is provided with a coherent semiconductor body composite () and a substrate (). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels () are generated at least through the base body () to form a grid structure (), which determines the dimensions of the components () to be produced. A passivation layer () is shaped in such a way that it covers the side surfaces of the separation channels (). Finally, the common composite is separated, wherein the substrate () is removed from the semiconductor body composite () and the common composite is separated along the separation channels () to form a plurality of components ().

Method for producing a plurality of components

A method of operating a lighting device with a light-emitting component, in which the light-emitting component includes a plurality of pixels configured to illuminate a plurality of zones in a field of view, the light-emitting component includes a processing device including characterization data of the light-emitting component, and the pixels of the light-emitting component are operated as a function of the characterization data, wherein to determine characterization data prior to intended operation of the lighting device an intensity and/or a color location of the emitted light of a pixel or of each pixel is measured as a function of an operating current.

Method of operating a lighting device

An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.

Optoelectronic component having side contacts

A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.

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Bad Abbach, Germany

Dominik Scholz