Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Ag

Osram Gesellschaft MIT Beschraenkter Haftung

Osram Opto Semiconductor Gmbh

Oskam Oled Gmbh

Dominik Eisert

Volker Härle

Berthold Hahn

Uwe Strauss

Alfred Lell

Christoph Eichler

Ulrich Zehnder

Stefan Bader

Johannes Baur

Michael Fehrer

Johannes Völkl

Stephan Kaiser

Hans-Jürgen Lugauer

Norbert Linder

Michael Zitzlsperger

Wolfgang Schmid

Stefan Lange

Ion Stoll

Yi Zheng

Dirk Berben

Stefan Illek

Frank Jermann

Stefan Grötsch

Martin Rudolf Behringer

Kirstin Petersen

Raimund Oberschmid

Krister Bergenek

Matthias Peter

Andreas Ploessl

Martin Zachau

Britta Göötz

Angela Eberhardt

Andreas Weimar

Madis Raukas

Manfred Mundbrod-Vangerow

Ulrich Jacob

Frank Kühn

Werner Plass

Helmut Bolay

Volker Haerle

Torsten Baade

Georg Rossbach

Frank Kuehn

Andreas Weimer

Marianne Ortmann

Alexander Martin

Hailing Cui

Ernst Nirschl

Florian Peskoller

Jörg Frischeisen

Wilhelm Stein

Albert Schneider

Dimitri Dini

Ute Liepold

Rebecca Römer

Sonja Tragl

Frank Baumann

Sönke Tautz

Thomas Huckenbeck

Robert Schulz

Jürgen Bauer

Günter Spath

Reinhard Sedlmeier

Michael Schmidberger

Stephan Miller

Zhengbo Yu

Nils Kaufmann

Andreas Pl&ouml;ssl

Jacob Ulrich

Stefanie Brüninghoff

Stefen Illek

Jason Montaner

Stefan GRÖTSCH

Volker HÄRLE

Manfred Mundbrod

Frank KÜHN

A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 μm to 80 μm. A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.

Dielectric film coating for full conversion ceramic platelets

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Optoelectronic component and method for producing an optoelectronic component

The present invention is directed to a wavelength converter comprising: &#x2014;a phosphor layer and&#x2014;a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 &#x3bc;m to 80 &#x3bc;m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.

A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGaO, AGaO, AEGaO, LnGaGeO, GaO, LnGaDOor MgDO, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Radiation-emitting optoelectronic device

A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.

Lighting device with a first phosphor and filter particles

An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an optoelectronic semiconductor component

A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

Lighting device for generating a light emission and method for generating a light emission

An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.

Ceramic conversion element, optoelectronic semiconductor element, and method for producing a ceramic conversion element

A ceramic conversion element includes an active ceramic layer that converts electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a carrier layer transmissive to radiation in the first wavelength range and/or radiation in the second wavelength range, wherein an inhibitor layer is arranged between the active layer and the carrier layer, the inhibitor layer reducing diffusion of activator ions from the active layer into the carrier layer.

Ceramic conversion element, semiconductor chip comprising a ceramic conversion element and method for producing a ceramic conversion element

A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.

Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation

A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Method for fabricating a semiconductor component based on GaN

A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (), which contains an active, radiation-generating layer () and has a first main face () and a second main face ()&#x2014;remote from the first main face&#x2014;for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face () of the multilayer structure () is coupled to a reflective layer or interface, and the region () of the multilayer structure that adjoins the second main face () of the multilayer structure is patterned one- or two-dimensionally with convex elevations ().

Radiation-emitting thin-film semiconductor chip

An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Optoelectronic component

An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Optoelectronic module and projection apparatus comprising the optoelectronic module

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Wuppertal, Germany

Dominik Eisert