Inpria Corporation

Dominick Smiddy

Benjamin L Clark

Craig M Gates

Mark Geniza

Jeremy T Anderson

Stephen T Meyers

Kai Jiang

Brian J Cardineau

Lauren B McQuade

Margaret Wilson-Moses

Joseph Burton Edson

Peter De Schepper

Thomas J Lamkin

Jan Doise

Shu-Hao L Chang

Gaetano Giordano

Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.

Stable solutions of monoalkyl tin alkoxides and their hydrolysis and condensation products

In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

Organometallic radiation patternable coatings with low defectivity and corresponding methods

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods

Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods

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Corvallis, OR, United States of America

Dominick Smiddy