Menlo Industries, Inc.

Other

Domingo A Figueredo

Chung-Yi Su

Sanehiko Kakihana

Alan R Desroches

The effective parasitic end resistance of small-value precision integrated circuit resistors is reduced by providing N resistors connected in parallel and causing at least two of the resistors to share a terminal contact. The resulting integrated circuit resistor includes multiple terminal contacts of any number n greater than two. Of the n terminal contacts, N-1 terminal contacts are shared amongst said resistors. The parasitic end resistances are diminished by a factor equal to the number of resistors connected in parallel. By increasing the length of the active area of the N resistors by a factor equal to the number of the resistors, the desired resistance value remains undiminished. As a result, the parasitic end resistances may be made negligible compared to the desired resistance even for small value resistors.

Small value precision integrated circuit resistors

A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.

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Bellingham, WA, United States of America

Domingo A Figueredo