Globalfoundries Inc.

Domingo A Ferrer Luppi

Benjamin G Moser

Michael Patrick Chudzik

Andrew Herbert Simon

Atsushi Ogino

Joyeeta Nag

Aritra Dasgupta

Jim Shih-Chun Liang

Derya Deniz

Sunit S Mahajan

Methods of forming a metal resistor are provided. The methods may include: depositing a metal layer, e.g., tungsten, on a substrate; and forming the metal resistor by implanting a semiconductor species, e.g., silicon and/or germanium, into the metal layer to form a semiconductor-metal alloy layer from at least a portion of the metal layer. In certain embodiments, an adhesion layer may be deposited by ALD prior to metal layer depositing. The metal resistor has a sheet resistance that remains substantially constant prior to and after subsequent annealing.

Metal resistor forming method using ion implantation

Aspects of the present disclosure include integrated circuit (IC) structures with metal plugs therein, and methods of forming the same. An IC fabrication method according to embodiments of the present disclosure can include: providing a structure including a via including a bulk semiconductor material therein, wherein the via further includes a cavity extending from a top surface of the via to an interior surface of the via, and wherein a portion of the bulk semiconductor material defines at least one sidewall of the cavity; forming a first metal level on the via, wherein the first metal level includes a contact opening positioned over the cavity of the via; forming a metal plug within the cavity to the surface of the via, such that the metal plug conformally contacts a sidewall of the cavity and the interior surface of the via, wherein the metal plug is laterally distal to an exterior sidewall of the via; and forming a contact within the contact opening of the first metal level.

Fabrication of IC structure with metal plug

One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.

Source/drain terminal contact and method of forming same

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Fishkill, NY, United States of America

Domingo A Ferrer Luppi