Stmicroelectronics S.r.l.

Domenico Murabito

Mario Giuseppe Saggio

Ferruccio Frisina

Angelo Magri'

Giuseppe Arena

Giuseppe Morale

Carlo Magro

Tiziana Cuscani

Letterio Fiore

An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a plurality of column structures are realized, which column structures comprises high aspect ratio deep trenches, said epitaxial layer being in turn covered by an active surface area wherein said high voltage device is realized, each of the column structures comprising at least an external portion being in turn realized by a silicon epitaxial layer of a second type of conductivity, opposed than said first type of conductivity and having a dopant charge which counterbalances the dopant charge being in said epitaxial layer outside said column structures, as well as a dielectric filling portion which is realized inside said external portion in order to completely fill said deep trench.

Semiconductor structure with varying doping profile and related ICS and devices

A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

Superjunction power device and manufacturing method

An embodiment of a process for manufacturing a semiconductor power device envisages the steps of: providing a body made of semiconductor material having a first top surface; forming an active region with a first type of conductivity in the proximity of the first top surface and inside an active portion of the body; and forming an edge-termination structure. The edge-termination structure is formed by: a ring region having the first type of conductivity and a first doping level, set within a peripheral edge portion of the body and electrically coupled to the active region; and a guard region, having the first type of conductivity and a second doping level, higher than the first doping level, set in the proximity of the first top surface and connecting the active region to the ring region. The process further envisages the steps of: forming a surface layer having the first type of conductivity on the first top surface, also at the peripheral edge portion, in contact with the guard region; and etching the surface layer in order to remove it above the edge portion in such a manner that the etch terminates inside the guard region.

Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device

An embodiment of a process for manufacturing a semiconductor power device envisages the steps of: providing a body made of semiconductor material having a first top surface; forming an active region with a first type of conductivity in the proximity of the first top surface and inside an active portion of the body; and forming an edge-termination structure. The edge-termination structure is formed by: a ring region having the first type of conductivity and a first doping level, set within a peripheral edge portion of the body and electrically connected to the active region; and a guard region, having the first type of conductivity and a second doping level, higher than the first doping level, set in the proximity of the first top surface and connecting the active region to the ring region. The process further envisages the steps of: forming a surface layer having the first type of conductivity on the first top surface, also at the peripheral edge portion, in contact with the guard region; and etching the surface layer in order to remove it above the edge portion in such a manner that the etch terminates inside the guard region.

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Catania, Italy

Domenico Murabito