Samsung Electronics Co., Ltd.

Dokyun Kim

Doohee Hwang

Yeonkyu Choi

Hyoseok Na

Jongdoo Kim

Taihwan Choi

Kwangseok Ahn

Wongi Hwang

Seongjin Lee

Saemi Song

An electronic device according to various embodiments of the disclosure may include: a first housing including a first conductive portion, a first non-conductive portion, and a first segmented portion extending from the first conductive portion, a second housing configured to accommodate at least a portion of the first housing and to guide a slide movement of the first housing, the second housing including a second conductive portion, and a flexible display including a first area connected to the first housing and a second area extending from the first area and configured to be bendable or rollable, wherein, from a slide-in state to a slide-out state of the first housing with respect to the second housing, the first conductive portion and the second conductive portion may be spaced apart from each other, and in the slide-in state of the first housing with respect to the second housing, at least a portion of the first non-conductive portion may overlap the second conductive portion.

Antenna structure and electronic device including same

Provided are a memory device and a method of refreshing the memory device regardless of a refresh rate multiplier for a temperature. In response to a refresh command at each base refresh rate (tREFi) based on a measured temperature, a memory device refreshes M memory cell rows at room temperature, refreshes 2M memory cell rows at a high temperature, and refreshes (&#xbd;)M memory cell rows at a low temperature. The memory device refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a refresh command applied after n skipped base refresh rates, and refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a pulling-in refresh command.

Memory device and method of refreshing memory device based on temperature

A memory system includes a memory controller and a memory device. The memory controller generates refresh commands periodically by an average refresh interval. The memory device performs a normal refresh operation and a hammer refresh operation during a refresh cycle time. The memory device includes a memory cell array including memory cells connected to a plurality of wordlines, a temperature sensor configured to provide temperature information by measuring an operation temperature of the memory cell array and a refresh controller configured to control the normal refresh operation and the hammer refresh operation. The refresh controller varies a hammer ratio of a unit hammer execution number of the hammer refresh operation executed during the refresh cycle time with respect to a unit normal execution number of the normal refresh operation executed during the refresh cycle time.

Memory system performing hammer refresh operation and method of controlling refresh of memory device

Growing community of inventors

Seongnam-si, South Korea

Dokyun Kim