Lg Display Co., Ltd.

Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Dohyung Lee

ChanYong Jeong

JuHeyuck Baeck

Saeroonter Oh

Juheyuck Baeck

Jeyong Jeon

Seungmin Lee

Hyunsoo Shin

JungSun Beak

Jonguk Bae

HongRak Choi

Euna Moon

Jeongin Cheon

Taeuk Park

Hoiyong Kwon

Sangcheol Lee

Hwankuk Yuh

Janghwan Cho

Kwanghwan Ji

Sejoon You

Younghyun Ko

Sungguk Lee

Jeongsoo Lee

Hongkyu Lee

Seokhoon Kang

Bongho Kim

Jaegwang Um

Byunghun Park

Sangdae Park

Kwangll Chun

KyungChul Ok

Chungil Lee

Chanyong Jeong

A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

Display device

Provided is a display device. The display device includes a substrate, a display panel including a display disposed on a front surface of the substrate and a flexible base material extending from the display to surround a portion of each of a side surface and a rear surface of the substrate, and a support layer disposed between the side surface of the substrate and the flexible base material to support the flexible base material. The flexible base material includes: a pair of curved portions spaced apart from the support layer and a side cover portion that is configured to connect the pair of curved portions to each other and is in contact with the support layer.

Display device having support module on side surface of substrate

A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises a first gate electrode and a second gate electrode, which are spaced apart from each other to overlap each other, and an active layer disposed between the first gate electrode and the second gate electrode, including a first active layer and a second active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first channel portion and a second channel portion, which are disposed in parallel.

Thin film transistor having dual active layers with dual channel portions and display device comprising the same

Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

Thin film transistor array substrate and display device

A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

Thin film transistor, method for manufacturing the thin film transistor and display device comprising the thin film transistor

A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

Thin film transistor array substrate and electronic device including the same

A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same

One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

Thin film transistor and display apparatus comprising the same

Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

Transistor array substrate and electronic device including same

A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

Growing community of inventors

Seoul, South Korea

Dohyung Lee