Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Lg Electronics Inc.

Amkor Technology, Inc.

Dohyung Kim

Shihwa Lee

Junghoe Kim

Sangwook Kim

Jaesung Lee

Seungwon Yoo

Hwanwook Park

Jonghyeok Im

Dongyoon Seo

SeHwan Na

Wonseop Lee

Miyoung Kim

Joonsuk Lee

Saemleenuri Lee

JooHwan Shin

Jungchul Lee

MinHo Oh

Seongchul Hong

Taro Hasumi

Insung Kim

Jeonghoon Baek

Young-Ky Kim

SeJune Kim

Dong-Hyun Im

JungChul Kim

Miao Lei

Jinhong Park

Ki-Ho Cho

Youngju Park

SangMoo Song

Seongwoo Park

Jong-hyun Seok

Wooseong Chung

Chongsok Kim

Hyeyoung Park

Jae-Duck Lee

JiNo Lee

Jinil Lee

Kyutae Ahn

Ronald Patrick Huemoeller

Donghoon Lee

Jinwoo Park

David Jon Hiner

Jiyoung Kim

Jiwon Kim

Michael G Kelly

Eunmi Oh

Doohyun Kim

Jeongdae Seo

Jaeyoung Lee

Young-Ho Lee

Jaehoon Shin

Hongseok Choi

Sangjo Lee

Shinhan Kim

Jeonggil Lee

Juhwan Lee

Jaehong Park

Woosung Yang

JungSoo Park

Jonghoon Kim

Taeshick Kim

Kookjeong Seo

Dong-chan Lim

Sukkang Sung

Hauk Han

SeungHan Paek

Tae-Kyung Kim

ChangWook Han

Keun Young Lee

Hyunjae Kang

Hyunseok Lim

Byoungjae Bae

Sejun Park

SangHoon Lee

Seoksoo Lee

Byungchul Ahn

Seulgi Lee

SungJin Park

Jaehan Park

Gwijeong Cho

JinHo Kim

Yongmin Tai

Yunho Lee

Minho Oh

Seungkoo Lee

ByungSam Min

Sunghwan Jang

JunHo Yeo

Hyeyun Kim

Bora Kim

Younseok Kam

SeungMin Lee

Jaeho Song

Heechul Lim

Sehwan Na

Hongdae Shin

Hyunjun Sim

Seongyong Uhm

Jaekwang Lee

A three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. The cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.

Three-dimensional semiconductor memory device and electronic system including the same

A refrigerator includes: a storage chamber configured to be maintained at a temperature above zero degrees Celsius; an evaporator disposed in a duct that is fluidly connected to the storage chamber; a compressor; a valve disposed in a flow path which connects the compressor to the evaporator; a first fan configured to drive air that is cooled by the evaporator to the storage chamber; and a controller. The controller is configured to: control at least one of the compressor or the valve to supply a refrigerant to the evaporator based on the temperature of the storage chamber, and delay operation of the first fan for a preset first reference period of time after the at least one of the compressor or the valve began supplying the refrigerant to the evaporator.

Refrigerator and controlling method thereof

A semiconductor device includes a first substrate structure including a first decoder circuit region, a second decoder circuit region, and a page buffer circuit region, and a second substrate structure connected to the first substrate structure. The second substrate structure includes a first cell structure that includes first horizontally extending gate electrodes, and a second cell structure that includes second horizontally extending gate electrodes. The second cell structure is disposed below the first cell structure. A first stair structure is disposed to one side of the first and second cell structures, and a second stair structure is disposed to a second side opposite the first side. a dummy structure is disposed below the first stair structure. First contact plugs pass through the first stair structure and the first dummy structure and are respectively connected to the first gate electrodes, and second contact plugs pass through the second stair structure and are respectively connected to the second gate electrodes.

Semiconductor device and data storage system including semiconductor device

Discussed is a display device including an array substrate having a display area, a non-display area positioned outside the display area, a light-emitting array, and a sealing structure disposed on the array substrate, wherein the sealing structure seals the light-emitting array, and fixes a plate-shaped reinforcing substrate facing toward the sealing structure to the array substrate, wherein the sealing structure includes a first adhesive layer facing toward the array substrate, a second adhesive layer facing toward the reinforcing substrate, and a barrier layer disposed between the first adhesive layer and the second adhesive layer.

Display device including a sealing structure

A display device includes each of the plurality of data lines divided into a plurality of sub data lines, and each of the plurality of sub data lines connected to a plurality of sub pixels having the same color, the first reference voltage line connected to the plurality of first sub pixels disposed in the 8k-7th column, the plurality of second sub pixels disposed in the 8k-6th column, the plurality of third sub pixels disposed in the 8k-5th column, the plurality of fourth sub pixels disposed in the 8k-4th column, and the second reference voltage line is connected to the plurality of first sub pixels disposed in the 8k-3rd column, the plurality of second sub pixels disposed in the 8k-2nd column, the plurality of third sub pixels disposed in the 8k-1st column, the plurality of fourth sub pixels disposed in the 8k-th column.

Display device

An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.

Ion beam source, substrate process apparatus including the same, and method of processing a substrate using the same

Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

Semiconductor manufacturing apparatus and operating method thereof

A module board and a memory module are provided. The module board includes a first branch line for connecting a clock signal terminal disposed on at least one surface to a first branch point; a first signal line for connecting the first branch point to a first module clock signal terminal; a second signal line for connecting the first module clock signal terminal to the kmodule clock signal terminal and a first termination resistance terminal; a third signal line for connecting the first branch point to a (k+1)module clock signal terminal; and a fourth signal line for connecting the (k+1)module clock signal terminal to a 2kmodule clock signal terminal and the second termination resistance terminal, wherein a length of the third signal line is greater than a sum of a length of the first signal line and a length of the second signal line.

Module board and memory module including the same

A PCB includes a plurality of layers spaced apart in a vertical direction, a first detection pattern and a second detection pattern and pads connected to the first detection pattern and the second detection pattern. The first detection pattern and the second detection pattern are provided in a respective one of a first layer and a second layer adjacent to each other such that the first detection pattern and the second detection pattern are opposed to each other. The pads are provided in an outmost layer. Each of the first detection pattern and the second detection includes at least one main segment extending in at least one of first and second horizontal directions and a diagonal direction. A time domain reflectometry connected to a pair of pads detects a misalignment of the PCB by measuring differential characteristic impedance of the first detection pattern and the second detection pattern.

Printed circuit boards and memory modules

A display device includes an encapsulating structure disposed on an array substrate, a bottom cover accommodating therein the array substrate and the encapsulating structure, and at least one heat dissipation pattern disposed between the encapsulating structure and the bottom cover. The heat dissipation pattern may include a porous framework layer and a heat emission layer composed of particles coated on the framework layer. This heat dissipation pattern may allow heat transfer from the encapsulating structure to the bottom cover to be performed more quickly and efficiently.

Display device comprising at least one heat dissipation pattern

A light source capable of operating third and fourth reflection mirrors included in a beam splitting device in conjunction with movements of first and second reflection mirrors included in a beam transfer device and an optical assembly, respectively. The third and fourth reflection mirrors are disposed on optical paths of a pre-pulse and a main pulse emitted from first and second pulse generators, respectively. The light source operates the third and fourth reflection mirrors to offset an excessive compensation of the main pulse caused in a process of compensating for an optical path error of the pre-pulse. The light source may be included in an extreme ultraviolet light source system.

Light source and extreme ultraviolet light source system using the same

A memory module including: a first printed circuit board; a first socket and a second socket; and a daisy chain pattern formed in a first region of the first printed circuit board and connected to the first socket and the second socket, wherein an electrical signal on the daisy chain pattern is transferred to a host device when the first socket and the second socket are connected to the host device.

Memory module for protection of a circuit, a memory module protection device, and a memory module protection system

A laser beam delivery apparatus of an extreme ultra violet light source may include a high power seed module configured to generate a laser beam, a power amplifier configured to amplify the laser beam generated by the high power seed module, a beam transfer module configured to collect and move the laser beam amplified by the power amplifier, a final focusing assembly optical platform configured to adjust focus of the laser beam collected and moved by the beam transfer module, and a focusing unit configured to focus the laser beam with the focus adjusted by the final focusing assembly optical platform to a target droplet. The power amplifier may include a position adjuster configured to adjust a position of the laser beam. The position adjuster may include a refraction plate having a flat surface. The power amplifier may include a pointing adjuster, which may include a mirror.

Laser beam delivery apparatus for extreme ultra violet light source

Growing community of inventors

Hwaseong-si, South Korea

Dohyung Kim