Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Yonsei University

Dohyang Kim

Eunsung Lee

Joungeun Yoo

Hyun-Kwang Seok

Yu-Chan Kim

Kwang-Youn Kim

Duseop Yoon

Eric Fleury

Ki-bae Kim

Jayaraj Jayamani

Mee-soon Lee, Legal Representative

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.

Quasicrystalline material and semiconductor device applying the same

The present invention relates to an amorphous alloy and a method for manufacturing thereof. The amorphous alloy according to the present invention includes has a chemical formula of Feioo-a-b-c-d-e-f-gCraMobCcBaYeMflg. Here, the M is at least one selected from a group consisting of Al, Co, N1 and Ni, and the I is at least one selected from a group consisting of Mn, P, S, and O as impurities. The a, b, c, d, e, f, and g are satisfied with the compositions of 16.0 wt %&#x2266;a&#x3c;22.0 wt %, 15.0 wt %&#x3c;b&#x2266;27.0 wt %, 2.0 wt %&#x2266;c&#x3c;3.5 wt %, 1.0 wt %&#x3c;d&#x2266;1.5 wt %, 1.0 wt %&#x3c;e&#x2266;3.5 wt %, 0.25 wt %&#x3c;f&#x2266;3.0 wt %, and 0.01 wt %&#x2266;g&#x3c;0.5 wt %, respectively.

Amorphous alloy and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Dohyang Kim