Lg Electronics Inc.

Dohwan Yang

Dohee Kim

Yongil Shin

Ilhyoung Jung

Jinah Kim

Juhong Yang

Bongchu Shim

Indo Chung

Jeongbeom Nam

Hyungjin Kwon

Jinhyung Lee

Kisu Kim

Youngdo Kim

Hongcheol Lee

A semiconductor light-emitting element supply device according to an embodiment of the present invention supplies semiconductor light-emitting elements in a fluid chamber in which self-assembly occurs, the semdconductor light-emitting element supply device comprising: a tray disposed in the fluid chamber; a transfer unit which includes a magnet and a magnet accommodating part for accommodating the magnet and which transfers the semiconductor light-emitting elements by using magnetic force; a supply unit disposed above the tray to supply the transferred semiconductor light-emitting elements to the tray; and a control unit for controlling operations of the tray, the transfer unit and the supply unit, wherein the control unit controls the position of the magnet accommodated in the magnet accommodating part so that the semiconductor light-emitting elements are adhered on one surface of the magnet accommodating part or the adhered semiconductor light-emittng elements are separated from the one surface of the magnet accommodating part.

Semiconductor light-emitting element supply device and supply method

A method for manufacturing a display device according to the present invention is characterized by comprising the steps of: supplying semiconductor light-emitting elements in a first chamber containing a fluid; disposing a distribution device, in which a plurality of magnets are arranged, on one side of the first chamber; rotating the distribution device such that the semiconductor light-emitting elements form a continuous pattern along the arrangement direction of the plurality of magnets; and stopping the distribution device such that the semiconductor light-emitting elements are distributed to a plurality of dummies, wherein in the step of stopping the distribution device, the plurality of dummies are formed at positions corresponding to the plurality of magnets.

Method for manufacturing display device

A display device can include first and second assembly electrodes spaced apart from each other on the substrate, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall disposed on the first assembly electrode, the second assembly electrode, the insulating layer and having an assembly hole, an annealed light-transmitting electrode layer disposed on the first assembly electrode and a semiconductor light emitting device disposed in contact with the annealed light-transmitting electrode layer.

Display device including semiconductor light emitting device

A device for collecting semiconductor light emitting diodes according to an embodiment of the present disclosure includes an electromagnet portion disposed in a fluid chamber into which semiconductor light emitting diodes including a magnetic material are put to form a magnetic field when power is applied, a power supply portion connected to the electromagnet portion and applying power to the electromagnet portion, and a driving portion moving the electromagnet portion in a width direction, in a longitudinal direction, and in a height direction of the fluid chamber, in which the electromagnet portion guides the semiconductor light emitting devices to a surface on which a magnetic field is formed when power is applied.

Apparatus and method for collecting semiconductor light emitting diodes

A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.

Display device using micro-LED, and manufacturing method therefor

A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Solar cell

A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.

A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a front electrode part electrically connected to the emitter region, and a back electrode part electrically connected to the substrate. The substrate includes a first area formed of single crystal silicon and a second area formed of polycrystalline silicon. A thickness of the anti-reflection layer positioned in the first area is less than a thickness of the anti-reflection layer positioned in the second area.

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Seoul, South Korea

Dohwan Yang