Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Dohee Kim

Jinbum Kim

Seunghun Lee

Gyeom Kim

Bongchu Shim

Yongil Shin

Dongwoo Kim

Hyunwoo Cho

Jaemun Kim

Dohwan Yang

Dahye Kim

Sunguk Jang

Kongsoo Lee

Sahwan Hong

Kihyun Hwang

Junghoon Kim

Changseo Park

Kyungin Choi

Jinhyung Lee

Kisu Kim

Bongjin Kuh

Haejun Yu

Gunho Kim

A method for manufacturing a display device according to the present invention is characterized by comprising the steps of: supplying semiconductor light-emitting elements in a first chamber containing a fluid; disposing a distribution device, in which a plurality of magnets are arranged, on one side of the first chamber; rotating the distribution device such that the semiconductor light-emitting elements form a continuous pattern along the arrangement direction of the plurality of magnets; and stopping the distribution device such that the semiconductor light-emitting elements are distributed to a plurality of dummies, wherein in the step of stopping the distribution device, the plurality of dummies are formed at positions corresponding to the plurality of magnets.

Method for manufacturing display device

A pattern formation method includes forming a first capping layer on a substrate, forming a recess that penetrates the first capping layer and an upper portion of the substrate, such that a non-penetrated portion of the first capping layer constitutes a first capping pattern, forming a second capping pattern that covers an inner sidewall of the recess, and forming a stack structure in the recess, such that the stack structure includes first stack patterns and second stack patterns that are alternately stacked, and the second capping pattern is between the substrate and a lateral surface of the stack structure.

Pattern formation method and semiconductor device fabrication method using the same

An integrated circuit device includes: an active region extending in a first horizontal direction on a substrate; a first transistor at a first vertical level on the active region, the first transistor including a first source/drain region having a first conductive type; and a second transistor at a second vertical level that is higher than the first vertical level on the active region, the second transistor including a second source/drain region having a second conductive type and overlapping the first source/drain region in a vertical direction, wherein the first source/drain region and the second source/drain region have different sizes.

Integrated circuit devices including vertically stacked field effect transistors

A device for collecting semiconductor light emitting diodes according to an embodiment of the present disclosure includes an electromagnet portion disposed in a fluid chamber into which semiconductor light emitting diodes including a magnetic material are put to form a magnetic field when power is applied, a power supply portion connected to the electromagnet portion and applying power to the electromagnet portion, and a driving portion moving the electromagnet portion in a width direction, in a longitudinal direction, and in a height direction of the fluid chamber, in which the electromagnet portion guides the semiconductor light emitting devices to a surface on which a magnetic field is formed when power is applied.

Apparatus and method for collecting semiconductor light emitting diodes

An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a substrate, a gate line extending in a second lateral direction on the fin-type active region, an insulating spacer covering a sidewall of the gate line, a source/drain region at a position adjacent to the gate line, a metal silicide film covering a top surface of the source/drain region, and a source/drain contact apart from the gate line with the insulating spacer therebetween in the first lateral direction. The source/drain contact includes a bottom contact segment being in contact with a top surface of the metal silicide film and an upper contact segment integrally connected to the bottom contact segment. A width of the bottom contact segment is greater than a width of at least a portion of the upper contact segment in the first lateral direction.

Integrated circuit device

A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.

Display device using micro-LED, and manufacturing method therefor

An integrated circuit device includes a plurality of gate structures each including a gate line extending on a fin-type active region and insulation spacers on sidewalls of the gate line; a source/drain contact between first and second gate structures, and having opposing sides that are asymmetric in the first horizontal direction; and an insulation liner on sidewalls of the source/drain contact. The source/drain contact includes a lower contact portion and an upper contact portion having a horizontal extension that extends on an upper corner of the first gate structure, the insulation liner includes a first local region between the upper corner and the horizontal extension and a second local region that is farther from the substrate than the first local region, and a thickness of the first local region is greater than that of the second local region.

A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.

Semiconductor devices and method of fabricating the same

The present invention relates to a display device having a structure in which an assembly substrate on which self-assembly has taken place can be used as a final substrate, and a method for manufacturing same. According to an embodiment of the present invention, first-conductive-type electrodes of vertical-type semiconductor light-emitting elements can be connected to seed metal, which is used as a wiring electrode, via a solder part, and thus there is the effect of directly using, as a final substrate, an assembly substrate on which the vertical-type semiconductor light-emitting elements are self-assembled, without an additional transfer process.

Display device using semiconductor light-emitting elements and manufacturing method therefor

A semiconductor device including an active region extending in a first direction on a substrate; channel layers vertically spaced apart on the active region; a gate structure extending in a second direction and intersecting the active region, the gate structure surrounding the channel layers; a source/drain region on the active region in contact with the channel layers; and a contact plug connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer on side surfaces of the channel layers and including a first impurity; a second epitaxial layer on the first epitaxial layer and including the first impurity and a second impurity; and a third epitaxial layer on the second epitaxial layer and including the first impurity, and in a horizontal sectional view, the second epitaxial layer includes a peripheral portion having a thickness in the first direction that increases along the second direction.

Semiconductor devices

Discussed is an assembly apparatus for assembling a semiconductor light emitting diode to a display panel, the assembly apparatus including an assembly module including at least one magnetic member and a magnetic member accommodator having at least one magnetic member accommodation hole, and a rotary module connected to the assembly module to rotate the assembly module along an orbit.

Assembly apparatus for assembling semiconductor light emitting diode to display panel

Discussed are a display device, and a method of manufacturing the display device. The display device includes a substrate having a plurality of metal pads, and a semiconductor light-emitting element electrically connected to the plurality of metal pads through self-assembly. Specifically, each metal pad includes a bonding metal electrically connected to a conductive electrode of a respective semiconductor light-emitting element, and a coating layer encompassing the bonding metal.

Display device using semiconductor light-emitting element

The present invention relates to a device and method for self-assembling semiconductor light-emitting diodes. Particularly, a method for manufacturing a display device according to the present invention includes: feeding a substrate to an assembly site and putting semiconductor light-emitting diodes having a magnetic material into a fluid chamber; applying a magnetic force to the semiconductor light-emitting diodes so that the semiconductor light-emitting diodes move in one direction within the fluid chamber; and guiding the semiconductor light-emitting diodes to preset positions on the substrate by applying an electric field, so that the semiconductor light-emitting diodes are mounted at the preset positions while in the process of being moved.

Growing community of inventors

Seoul, South Korea

Dohee Kim