Samsung Electronics Co., Ltd.

National Institute for Materials Science

Doh Won Jung

Chan Kwak

Daejin Yang

Jong Wook Roh

Woojin Lee

Youngjin Cho

Jongmin Lee

Yoon Chul Son

Sungwoo Hwang

Hyeon Cheol Park

Se Yun Kim

Hyungjun Kim

Giyoung Jo

Kimoon Lee

Hee Jung Park

Taewon Jeong

Kyoung-Seok Moon

Jae-young Choi

Takayoshi Sasaki

Jinyoung Hwang

Minoru Osada

Sang Il Kim

Chang Soo Lee

Ki Hong Kim

Sung Woo Hwang

Hyun Sik Kim

Euncheol Do

Yun Sung Woo

Tae Won Jeong

Kyu Hyoung Lee

Hyosug Lee

Yong Hee Cho

Byungki Ryu

Sang Ii Kim

Jae-Young Choi

Yoon Chui Son

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

Dielectric material, device including the same, and method of preparing the dielectric material

A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1&#x2212;)KNaNbOM(ASb)O&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the same

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device

A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

Relaxor-ferroelectric material and method of synthesizing the same and device including relaxor-ferroelectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:AB.(1&#x2212;)(BiNa)TiO&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the dielectric material

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same

A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

Ceramic electronic component including ceramic nanosheets having multimodal lateral size distribution and method of manufacturing the same and electronic device

An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.

Electrical conductors, production methods thereof, and electronic devices including the same

A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

Ceramic electronic component and method of manufacturing the same and electronic device

A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1X[AMO]&#x2003;&#x2003;Chemical Formula 1wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n&#x2265;1.

An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.

Population of metal oxide nanosheets, preparation method thereof, and electrical conductor and electronic device including the same

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

A dielectric composite includes: at least one first dielectric material represented by Chemical Formula 1, and at least one second dielectric material represented by Chemical Formula 2, wherein the first dielectric material has at least one first crystal structure and the second dielectric material has a second crystal structure that is different from the first crystal structure, and the first dielectric material and the second dielectric material are agglomerated with each other,AABO&#x2003;&#x2003;Chemical Formula 1AABO.&#x2003;&#x2003;Chemical Formula 2

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Doh Won Jung