Robert Boschgmbh

Doerte Eimers-Klose

Richard Spitz

Franz Laermer

Andrea Schilp

Rainer Topp

Achim Henkel

Dirk Balszunat

Stephan Ernst

Reinhard Milich

Joerg Fischer

Helga Uebbing

Hans-Reiner Krauss

Cornelia Heinisch

Timo Gramann

A gateway unit for connecting subsystems, in vehicles in particular, in which at least one modular logical software gateway is used which routes messages between precisely two subnets, thus providing only one individual connection pathway.

Gateway unit for connecting sub-networks, in particular in vehicles

A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.

Method for removing defects from silicon bodies by a selective etching process

A method of establishing an electric connection between electric terminals of a semiconductor component as part of an electric module and additional parts of the electric module by using a punched grid having internal terminal ends and external terminal ends that are electrically connected to the internal terminal ends by metal strip conductors, the semiconductor component and the punched grid are joined so that at least two electric terminals of the semiconductor component are positioned on corresponding internal terminal ends so that a slip-proof mounting of the semiconductor component on the two internal terminal ends is then possible, this mechanical mounting at the same time establishing an electric connection between the electric terminals of the semiconductor component and the internal terminal ends, whereby a metal strip grid, e.g., a punched grid, which, even before being joined to the semiconductor component, has already been embedded on at least one side in at least one partial area in a material that is not electrically conductive, is used as the metal strip grid. This procedure is used for bond-free contacting of semiconductor components for high-power applications in which a power loss of more than 1 Watt may occur.

Method for electrically connecting a semiconductor component to an electrical subassembly

A three-phase bridge rectifier system is proposed, having three rectifier paths, in which two rectifier elements at a time are in series, each rectifier path between the rectifier elements being connectible to one of three leads of a three-phase current terminal; the three cathode terminals of the rectifier elements lying opposite the three-phase current connection are connected to an positive pole, and the three anode terminals of the rectifier elements lying opposite the three-phase current connection are connected to a negative pole; at least three of the rectifier elements being formed by two-pole semiconductor rectifiers having at least two series-connected p-n junctions. The system is used for making available a volt motor vehicle electrical system having assured reliable voltage limitation.

Rectifier system, preferably for a three-phase generator for motor vehicles

Growing community of inventors

Reutlingen, Germany

Doerte Eimers-Klose