U.S. Philips Corporation

Jds Uniphase Corporation

Miortech B.v.

Doeke J Oostra

Jozef J Ottenheim

Marinus J Dona

Jakob Vijfvinkel

Jarig Politiek

Remigius S Van Roemburg

Johanna M Van Rooij-Mulder

Hermanus Feil

Gerardus J Ouwerling

An electrowetting optical element, having a first electrode layer stack and a second electrode layer stack. Each layer stack has an electrode for applying a voltage to the electrodes for rearranging polar liquid relative to non-polar liquid. A containment space is formed between the first and second electrode layer stack. One or more cell walls extend between the electrode stacks for defining sides of the containment space forming cells. The electrowetting optical element further includes a retroreflective layer for reflecting incident light back through the element.

Electrowetting optical element

The invention provides an optoelectronic device having a holder and a coxial module which is secured in the holder and which includes an optoelectronic component, preferably a semi-conductor diode laser. The module is capable of receiving or emitting radiation at an end face of the module, preferably via a coupled glass fiber. Connection pins for the optoelectronic component are situated at the other end face of the module and the holder is provided with connection means which extended right angles to the longitudinal direction of the module and that are electrically connected to the connection pins. The connection pins are bent from the longitudinal direction of the module towards the connection means. The free ends of the connection pins are inserted in the connection means. The holder is provided with a clamping member by means of which the module is secured in the holder. The clamping member is constructed in such a manner that the module can be placed in the clamping member of the holder in a direction at right angles to the longitudinal direction of the module.

Holder for optoelectronic device having connection pins bent toward a

A method of manufacturing a device, preferably a semiconductor device, whereby a mask (3) with an opening (4) extending down to a bare body (1) is provided on a surface (2) of this body (1), after which a substance (5) is implanted into the body (1) through the opening (4), upon which the mask (3) is removed. The mask (3) is provided by depositing a first and a second layer (6, 7, respectively) on the surface (2), and these layers are provided with the opening (4), while the first layer (6) can be selectively removed relative to the material of the body (1), and the second layer (7) is of the same material as the body (1). Since the same material is used for the second layer (7) as for the body (1), the body (1) is not polluted with material from the mask (3) in the opening (4) during implantation.

Implantation method having improved material purity

A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).

Method of manufacturing a semiconductor device with a heterojunction by

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Eindhoven, Netherlands

Doeke J Oostra