Samsung Electronics Co., Ltd.

Do Young Rhee

Chul Min Kim

Tan Sakong

Suk Ho Yoon

Young Sun Kim

Sang Don Lee

Keon Hun Lee

Sung Tae Kim

Jong Hyun Lee

Ho Young Lee

Yong Seok Choi

Sang Heon Han

Joo Young Cheon

Jeong Wook Lee

Jin Young Lim

Ki Sung Kim

Dong Gyu Shin

Jeong Seok Lee

Seong Min Seo

Tae Mi Kim

A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Lighting system

A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.

Method of fabricating semiconductor light emitting device

A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

Semiconductor light emitting device

Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Method of manufacturing light emitting device

There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

A mobile input device of a mobile terminal includes: a selection unit for selecting an application program of the mobile terminal; an execution instruction unit for generating an instruction to execute the application program; and a wireless communication unit for transmitting the instruction to execute to the mobile terminal, wherein the mobile input device inputs information to the executed application program.

Mobile input device of mobile terminal

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Seoul, South Korea

Do Young Rhee