Hyundai Electronics Industries Co. Ltd.

Magnachip Semiconductor, Inc.

Do-Young Lee

Chan-Ki Kim

Kang-Jin Lee

Ki-Nam Park

Jae-Won Eom

A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels.

Pixel for CMOS image sensor having a select shape for low pixel crosstalk

A CMOS image sensor for providing a wider dynamic range even at a low power supply voltage level includes a plurality of unit pixels and a control unit. Each unit pixel includes: a light sensing element for sensing an incident light to generate photoelectric charges to a sensing node; a first switching unit, coupled between a power terminal and the sensing node, for transferring a reset voltage level from a voltage source to the light sensing element; an amplification unit for amplifying a voltage level of the sensing node to output an amplified signal, wherein one terminal of the amplification unit is coupled to a ground terminal; a second switching unit, coupled between an output node and the other terminal of the amplification unit, for outputting the amplified signal as an image data via the output node. The control unit, which is coupled between the power terminal and the output node, controls an output resistance of the output node.

CMOS image sensor for providing wider dynamic range

A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Color image sensor and method for fabricating the same

The present invention relates to a semiconductor device; and, more particularly, to a power-on reset circuit to produce a stable reset signal irrespective of driving speed of a power-on signal which is applied thereto at the time of its initial chip operation. The power-on reset circuit according to the present invention comprises an input unit receiving the power-on signal from an external circuit; a schmitt trigger inverter including an output node, wherein a voltage level at the output node is toggled from a high voltage level signal to a low voltage level signal before an output signal from the input unit increases up to a desired voltage level; and an output unit coupled to the output node for generating the power-on reset signal in response to the voltage level at the output node.

Growing community of inventors

Ichon-shi, South Korea

Do-Young Lee