Semes Co., Ltd.

Do Youn Lim

Kuk Saeng Kim

Wan Hee Jeong

Ji Hoon Jeong

Pil Kyun Heo

Hyun Yoon

Young Dae Chung

Do Yeon Kim

Tae Shin Kim

Jung Suk Goh

Young Je Um

Kwang Sup Kim

Jee Young Lee

Won Geun Kim

Ye Rim Yeon

Noh Hoon Myoung

Yong Jun Seo

Jae Seong Lee

Yoon Ki Sa

Byeong Geun Kim

Proposed is a wafer expander for uniformly expanding gaps between dies, and a die supplying module and die bonding equipment including the same. The wafer expander, for supporting a dicing tape to which a plurality of dies are attached and for expanding gaps between the plurality of dies, includes an expander ring detachably coupled to a wafer ring that fixes an edge of the dicing tape, and configured to ascend and descend, and a base ring supporting a bottom side of the dicing tape, and at least a portion thereof is configured to ascend and descend.

Wafer expander for uniformly expanding gap between dies, and die supplying module and die bonding equipment including same

According to an embodiment of the present invention, there is provided an article transport vehicle capable of speeding up and reducing vibration in a manufacturing plant, a rail assembly, and an article transport system including the same. The article transport vehicle that conveys an article between manufacturing facilities along a rail of an article transport system in a manufacturing plant includes an article holder, a vehicle body, a magnetic levitation actuator, and a linear motor coil.

Article transport vehicle, rail assembly, and article transport system including the same

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

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Hwaseong-si, South Korea

Do Youn Lim