Semes Co., Ltd.

Skhynix Inc.

Do Yeon Kim

Hyun Yoon

Pil Kyun Heo

Ho Jong Hwang

Ki Hong Lee

In Su Park

Young Jun Son

Won Geun Kim

Tae Hoon Lee

Jong Min Lee

Jin Kyu Kim

Se Hoon Oh

Ji Hoon Jeong

Young Dae Chung

Yoon Jong Ju

Tae Shin Kim

Kuk Saeng Kim

Young Je Um

Jee Young Lee

Kwang Sup Kim

Jung Suk Goh

Min Sung Han

Joon Ho Won

Ju Mi Lee

Yong Tak Hyun

Ye Rim Yeon

Do Youn Lim

Hyun Goo Park

Yong Jun Seo

Jae Seong Lee

Byeong Geun Kim

Yoon Ki Sa

Choong Hyun Lee

Chul Gyun Baik

Sung Gyu Lee

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a cup having a treatment space therein; a support unit configured to support a substrate within the treatment space, and including a rotatable support plate; and a liquid discharge unit configured to discharge a chemical liquid to the substrate supported by the support unit, in which the support unit includes: a plurality of pin members provided to the support plate to support the substrate placed on the support plate; and a discharge member coupled to the pin member to discharge charges to the air according to a rotation of the support plate, and the discharge member is provided as a conductive member.

Support unit and substrate treating apparatus

A substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a pipe connected to the nozzle unit and a processing liquid supply unit supplying the processing liquid; a charge amount control unit disposed at the pipe, including a filter unit charged with positive charges or negative charges, and including at least one of a control valve, controlling a flow rate of the processing liquid passing through an inside of the filter unit, and a power supply unit, applying a voltage to the filter unit, to control a charge amount of the processing liquid; and a control unit connected to the charge amount control unit.

Substrate processing apparatus and substrate processing method

Proposed are a home port and a substrate processing apparatus using the same. The home port is installed in the substrate processing apparatus to temporarily mount a nozzle for discharging a process liquid to a substrate, and includes a main body having a space therein, a nozzle holder provided at an upper portion of the main body and configured to mount the nozzle, an inclined surface formed below the nozzle holder in the space, a first supply pipe configured to discharge a rinse liquid to a tip of the nozzle, a second supply pipe configured to inject the rinse liquid into the main body, a conductive wire configured to electrically connect the inclined surface and the first supply pipe, and a first switch installed on the conductive wire.

Home port and substrate processing apparatus using same

A heterogeneous composite material and a method for manufacturing the heterogeneous composite material are provided. The heterogeneous composite material includes a first compression structure formed by compressing a first material, and a second compression structure formed by compressing a second material different from the first material, and disposed in close contact with the first compression structure, wherein at least a portion of the first compression structure and at least a portion of the second compression structure are disposed on both sides of a boundary surface existing in a circular shape with a predetermined radius with respect to a central axis in a state in contact with each other at the boundary surface.

Heterogeneous composite material and method for producing the same

Provided is a substrate treatment apparatus including a treatment container equipped with a conductive member. The conductive member is made of a material having a lower resistivity than that of the treatment container. The conductive member prevents a rise of an electric potential of the treatment container, which is caused by charging during treatment of a substrate, thereby preventing the substrate from being contaminated and damaged by particles and electrostatic arcing.

Substrate treatment apparatus and method of performing treatment process on substrate

A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer.

Method for manufacturing a semiconductor device having a channel layer with an impurity region

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

Semiconductor device having a vertical channel layer with an impurity region surrounding a dielectric core

The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

Growing community of inventors

Yongin-si, South Korea

Do Yeon Kim