Lg Siltron Incorporated

Do-Yeon Kim

Jin-Woo Ahn

Bong-Woo Kim

II-Soo Choi

Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.

Growing community of inventors

Daegu, South Korea

Do-Yeon Kim