Samsung Display Co., Ltd.

Do-Yeob Kim

Byoung-Kwon Choo

Cheol-Ho Park

Hee-Geun Son

A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method including: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit.

Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate

An apparatus for inspecting crystallization includes a substrate including a semiconductor layer, the semiconductor layer includes a plurality of crystallized regions separated from each other; a stage configured to change a position of the substrate, the substrate being seated thereon; a photographing unit configured to acquire image data regarding the semiconductor layer; an inspection unit configured to obtain inspection data regarding the semiconductor layer; and a control unit configured to output change data regarding a change in the position of the substrate according to the image data acquired by the photographing unit.

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Yongin, South Korea

Do-Yeob Kim