Samsung Electronics Co., Ltd.

New Power Plasma Co., Ltd.

Do-In Bae

Wan-Goo Hwang

Dae-Kyu Choi

Jin-Man Kim

Yun-sik Yang

Young-Min Min

Tae-Won Lee

Heok-Jae Lee

Hyu-Rim Park

Kee-Weone Seo

Chang-Woo Woo

Sang-Ho Kim

Jin-Jun Park

Sang-ho Kim

Seong-gu Kim

Guk-Kwang Kim

Jung-Hun Han

Jong-hyun Yang

Jaung-Joo Kim

Sang-Yeoul Lee

Su-han Yun

A wafer aligning apparatus includes a laser sensor that generates a trigger signal, a CCD camera imaging a wafer in response to the trigger signal, a signal processing unit that calculates a center alignment correction value for the wafer, and a robot controller that receives the center alignment correction value to control movement of a transfer robot. The laser sensor generates the trigger signal in accordance with a change in reflected light detected by the laser sensor, the change in the amount of reflected light being detected by the laser sensor when a boundary between a blade of the transfer robot and a coupler of the transfer robot passes under the laser sensor.

Wafer aligning apparatus and related method

A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same

An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

Ion source element, ion implanter having the same and method of modifying the same

Embodiments of the invention provide a wafer aligning apparatus and a wafer aligning method. In one embodiment, the wafer aligning apparatus comprises an imaging unit adapted to take an image of a wafer being transferred from a load lock chamber to a transfer chamber and adapted to convert the image into digital signals, and a signal processing unit adapted to calculate a center alignment correction value for the wafer by comparing the digital signals to a master image stored in the signal processing unit. The wafer aligning apparatus further comprises a robot controller adapted to receive the center alignment correction value from the signal processing unit and adapted to control a transfer robot in accordance with the center alignment correction value to provide the wafer to a process chamber such that the center of the wafer is substantially aligned.

An apparatus for catching byproducts in semiconductor device processing equipment is disposed in an exhaust line between a process chamber and a vacuum pump. The apparatus includes a cylindrical trap housing member, an upper cover and a lower cover covering the upper part and lower part of the trap housing, respectively, a heater disposed under the upper cover, first and second cooling plates disposed in the trap housing, a post spacing the cooling plates, apart and a cooling system for cooling respective portions of the apparatus. The cooling system includes a delivery pipe for supplying refrigerant, a discharge pipe for discharging the refrigerant from the apparatus, first cooling piping extending through each cooling plate and connected to the delivery and discharge pipes, and second cooling piping extending helically along the outer circumferential surface of the trap housing.

Apparatus for catching byproducts in semiconductor device fabrication equipment

A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Method for generating gas plasma

A metal gasket for a semiconductor fabrication chamber capable of preventing base plate metal contamination in the chamber, wherein the metal gasket includes a diffusion barrier layer interposed between a base plate and an anti-corrosive coating layer, and wherein the diffusion barrier layer prevents elements of the base plate from being diffused to the anti-corrosive coating layer. Accordingly, the diffusion barrier layer prevents attack on the anti-corrosive coating layer.

Metal gasket for a semiconductor fabrication chamber

An apparatus for heating a substrate of a semiconductor device includes a hot plate, on which a semiconductor substrate is placed, and a heater for heating the hot plate. The hot plate is preferably a composite plate including a plurality of plates having different thermal conductivities from each other. For example, a first plate adjacent to the heater can be made of aluminum, which has a relatively high thermal conductivity. A second plate, laminated on top of the first plate, can be made of titanium or stainless steel, which both have a thermal conductivity lower than aluminum. A composite hot plate as disclosed herein is better able to maintain a constant temperature and a uniform temperature distribution in order to more uniformly heat a substrate and to reduce an amount of energy required for the heating process. In addition, the reliability and productivity of the semiconductor device manufactured by the apparatus can be improved.

Growing community of inventors

Changwon-si, South Korea

Do-In Bae