Industry-Academic Cooperation Foundation Gyeongsang National University

Do Hyeon Lee

Jun Hong Park

Hyeong Tae Kim

Su Yeon Cho

A transition metal chalcogenide flake manufactured by the molten salt-assisted thermal chemical vapor deposition method according to a preferred embodiment can be uniformly and evenly grown on a large-area substrate with a size of several to several hundred micrometers in scale, and a light-gated transistor using this as a light sensing layer can perform logical operations of AND, OR, and summation operations in response to light stimulation and enable a low-power synaptic operation response.

Light-gated transistor including large-area transition metal dichalcogenide as light sensing layer and method of manufacturing the same

An integrated structure according to a preferred embodiment may include a silicon or silicon-on-insulator (SOI) substrate, a conductive layer spaced apart from the substrate and including a metal or a metal compound, and a diffusion barrier layer provided therebetween. The substrate and the diffusion barrier layer may directly contact and form a van der Waals junction. Since the diffusion barrier layer may block diffusion of metal atoms into the substrate lattice by blocking movement of materials (atoms) between the substrate and the conductive layer and may also control injection of holes from the conductive layer toward the substrate, defects at the metal-semiconductor interface may be controlled to overcome the limitations of ultra-fine and highly integrated semiconductors.

Integrated structure having a P-type semiconductor diffusion barrier layer forming a Van Der Waals junction with a P-type substrate and electronic device including the same

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Jinju-si, South Korea

Do Hyeon Lee