Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Yonsei University

Yonsi University, University-industry Foundation (uif)

Industry-academic Cooperation Foundation

Do-hyang Kim

Se Yun Kim

Eun-Sung Lee

Sang-Soo Jee

Eun Sung Lee

Sang-mock Lee

Sang Soo Jee

Yu-Chan Kim

Se-Yun Kim

Eric Fleury

Ki-bae Kim

Byung-Joo Park

Jayamani Jayaraj

Ka Ram Lim

Jun Ho Lee

Sang Mock Lee

Suk Jun Kim

Jin Man Park

Jung Yun Won

Keum Hwan Park

In Yong Song

Ka-Ram Lim

Sang-Mock Lee

According to example embodiments, a metallic glass includes aluminum (Al), a first element group, and a second element group. The first element group includes at least one of a transition metal and a rare earth element. The second element group includes at least one of an alkaline metal, an alkaline-earth metal, a semi-metal, and a non-metal. The second element group and aluminum have an electronegativity difference of greater than or equal to about 0.25. The second element group is included less than or equal to about 3 at % of the metallic glass, based on the total amount of the aluminum (Al), the first element group, and the second element group. A conductive paste and/or an electrode of an electronic device may be formed using the metallic glass.

Metallic glass, conductive paste, and electronic device

According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cmor less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass has a resistivity that is decreased when the metallic glass is heat treated at a temperature that is higher than a glass transition temperature of the metallic glass.

A conductive paste may include a conductive powder, a metallic glass including a first element having a heat of mixing value with the conductive powder of less than 0, and an organic vehicle, and an electronic device and a solar cell may include an electrode formed using the conductive paste.

Conductive paste and electronic device and solar cell including an electrode formed using the same

According to an example embodiment, a conductive paste includes a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle. The metallic glass may include an alloy having a disordered atomic structure that includes at least two metals. An electronic device and/or solar cell may include an electrode formed using the conductive paste. An electrode formed using a conductive paste according to example embodiments may have lower contact resistance than an electrode formed using a conductive paste that includes glass frits instead of a metallic glass.

A nanometer-sized porous metallic glass and a method for manufacturing the same are provided. The porous metallic glass includes Ti (titanium) at 50.0 at % to 70.0 at %, Y (yttrium) at 0.5 at % to 10.0 at %, Al (aluminum) at 10.0 at % to 30.0 at %, Co (cobalt) at 10.0 at % to 30.0 at %, and impurities. Ti +Y+Al+Co+the impurities=100.0 at %.

Metallic glass with nanometer-sized pores and method for manufacturing the same

A nanometer-sized porous metallic glass and a method for manufacturing the same are provided. The porous metallic glass includes Ti (titanium) at 50.0 at % to 70.0 at %, Y (yttrium) at 0.5 at % to 10.0 at %, Al (aluminum) at 10.0 at % to 30.0 at %, Co (cobalt) at 10.0 at % to 30.0 at %, and impurities. Ti+Y+Al+Co+the impurities=100.0 at %.

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Seoul, South Korea

Do-hyang Kim