Samsung Electronics Co., Ltd.

Sungkyunkwan University

Do-Haing Lee

Sung-Wook Hwang

Geun-Young Yeom

Myeong-Cheol Kim

Do-hyoung Kim

Ha-Na Kim

Yong-Jin Kim

Chul-Ho Shin

Soo-Yeon Jeong

Nam-Myun Cho

Byoung-Jae Park

Dong-Seok Lee

Chung-woo Kim

Jin-Seok Lee

Soo-doo Chae

Sang-Kuk Kim

Jeong-Hee Han

Jong-Woo Sun

Choong-Man Lee

Yung-hee Yvette Lee

Tokashiki Ken

Chul-ho Shin

Kyeong-Joon Ahn

Chan-jin Park

Byoung Jac Park

A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.

Semiconductor device

Methods of manufacturing a semiconductor device

An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support

A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

Method of manufacturing semiconductor device

Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.

Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same

Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation

An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

Apparatus and method for controlling ion beam

An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Ion beam apparatus having plasma sheath controller

Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.

Neutral beam source having electromagnet used for etching semiconductor device

Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.

3-grid neutral beam source used for etching semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Do-Haing Lee