Samsung Electronics Co., Ltd.

Korea Institute of Materials Science

Do-Geun Kim

Young-bok Jeon

Hyo-jae Bang

Hong-kyun Kim

Chan-Ik Park

Moon-Wook Oh

Dong-Yang Lee

Ju-yun Jung

Bu-Il Jung

Min-Yeab Choo

Sun-Young Lim

Hee-Dong Kim

Sung-Lae Cho

Myung-ho Kim

Hyuk Soo Han

Mi-Kyoung Park

Seung-Hoon Lee

Chang-su Kim

Hun-kwan Park

Kui-Yon Moon

This disclosure relates to a plasma generator including a porous ceramic dielectric. More specifically, this disclosure relates to a plasma generator for air purification capable of effectively generating ozone for removing bacteria, viruses, etc., and minimizing pressure loss while increasing air purification capacity by including a porous ceramic dielectric coated with an antibacterial material.

Plasma generation device comprising porous ceramic dielectric

Memory device

A memory system includes a read-only memory (ROM), a main memory and a processor. The ROM stores a basic input/output system (BIOS). The main memory includes a fail address table which stores at least one fail address designating a memory cell row having at least one defective cell. The processor receives fail information of the at least one fail address from the main memory and loads data associated with a booting operation of the memory system in a safe area of the main memory by avoiding a fail area corresponding to the at least one fail address during power-on operation while a power is applied to the memory system. The data associated with the booting operation is stored in a storage device.

Memory device and computing system including the same

A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.

Method of repairing a memory device and method of booting a system including the memory device

In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Solid state memory (SSM), computer system including an SSM, and method of operating an SSM

A data storage device for processing a command includes a host interface and a controller. The host interface stores program information sent within the command from a host. The controller decodes the program information that indicates a memory type to be accessed for the command. In addition, the controller determines whether the specified memory type can be accessed according to the command. The controller performs the command by accessing the memory type when the memory type specified by the program information is available for access.

Method and data storage device for processing commands

A memory system having a plurality of semiconductor memory devices includes a plurality of memory slots, a plurality of memory modules each having memory devices and being mounted on corresponding one of the memory slots, and a plurality of reference voltage sources for providing reference voltages each having a different level to the respective memory modules.

Apparatus for providing reference voltages to memory modules in a memory system

Growing community of inventors

Seoul, South Korea

Do-Geun Kim