Duk San Neolux Co., Ltd.

Ulsan National Institute of Science and Technology

Do Eon Kim

Hyung Dong Lee

Jong Nam Park

Chang Min Lee

Eun Byul Bang

Yun Hee Park

Jong Moon Shin

Kang Yong Kim

Yong Hoon Choi

Provided are a quantum dot, a method of manufacturing the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including a first semiconductor nanocrystal and a doping metal. The first semiconductor nanocrystal includes a group II element, a group III element, and a group V element. The quantum dot has a narrower full width at half maximum (FWHM) and superior quantum efficiency, and manufactured in a simple manner.

Quantum dot, method of manufacturing quantum dot, and electronic element

A technology disclosed in the present disclosure provides a Group III-V-based quantum dot including a seed which includes a Group III element, a Group V element, and an active metal having various oxidation numbers and in which a molar ratio of the Group III element and the active metal is 1:3 to 1:30, and a method of manufacturing the same.

III-V-based quantum dot and method of manufacturing same

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Ulsan, South Korea

Do Eon Kim