Versum Materials US, LLC

Air Products and Chemicals, Inc.

Dnyanesh Chandrakant Tamboli

Mark Leonard O'Neill

Hongjun Zhou

Krishna P Murella

Xiaobo Shi

Madhukar Bhaskara Rao

Reinaldo Mario Machado

John Edward Quincy Hughes

Gautam Banerjee

David Barry Rennie

Rajkumar Ramamurthi

Matthias Stender

Gene Everad Parris

Jo-Ann Theresa Schwartz

Malcolm Grief

Steven Charles Winchester

Andrew J Dodd

Joseph D Rose

James Allen Schlueter

Terence Collier

Maitland Gary Graham

James Matthew Henry

Keith R Fabregas

Song Y Chang

Charles A Lhota

Mark Evans

Chun Lu

Stephen W Hymes

Mark Leonard O'neill

Keith Randolph Fabregas

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Tungsten chemical mechanical polishing for reduced oxide erosion

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH&#x3c;7 and optionally a surfactant with two sulfonic acid groups.

Post chemical mechanical planarization (CMP) cleaning

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Chemical mechanical planarization of films comprising elemental silicon

Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Composite particles, method of refining and use thereof

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Composite abrasive particles for chemical mechanical planarization composition and method of use thereof

Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.

Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.

Composition and method used for chemical mechanical planarization of metals

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Additives for barrier chemical mechanical planarization

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives

A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

Method for wafer dicing and composition useful thereof

The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.

Formulations and method for post-CMP cleaning

Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.

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Gilbert, AZ, United States of America

Dnyanesh Chandrakant Tamboli