Iqe Plc

Dmitri Lubyshev

Joel Mark Fastenau

Scott Alan Nelson

Philip Lee Frey

Amy Wing Kwan Liu

Michael Vincent Kattner

Hubert Krysiak

Zhaoquan Zeng

Aled Owen Morgan

Stuart Andrew Edwards

Mark Justin Furlong

Matthew Fetters

A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.

Photodetector structures formed on high-index substrates

An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.

Optoelectronic devices formed over a buffer

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Bethlehem, PA, United States of America

Dmitri Lubyshev