Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Université´ D'aix-Marseille

Djohan Bonnet

Elisa Vianello

Jean-Michel Portal

Tifenn Hirtzlin

Eduardo Esmanhotto

A memory cell, includes first and second main terminals, an auxiliary terminal; M memristor(s) between the main terminals, M≥1; M primary switch(es), each in parallel with a memristor; and a secondary switch between the second main terminal and the auxiliary terminal. It is configured for writing to at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other primary switch, closing the secondary switch and applying a corresponding programming voltage between the first main terminal and the auxiliary terminal; and for reading at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other possible primary switch, opening the secondary switch and measuring a corresponding electrical quantity between the main terminals.

Growing community of inventors

Grenoble, France

Djohan Bonnet