Texas Instruments Corporation

Django Trombley

Benjamin Stassen Cook

Juan Alejandro Herbsommer

Rajen Manicon Murugan

Jie Chen

Gary Paul Morrison

Stanley Craig Beddingfield

Kenneth Robert Rhyner

Chittranjan Mohan Gupta

Minhong Mi

Binghua Hu

Yanbiao Pan

Phillip Nadeau

Baher S Haroun

Srinath Mathur Ramaswamy

Chih-Ming Hung

Simon Joshua Jacobs

Ricky A Jackson

Steven Alfred Kummerl

Adam Joseph Fruehling

Rick L Wise

Stuart M Jacobsen

Paul Merle Emerson

Nicholas Stephen Dellas

Maria Wang

A semiconductor device includes an integrated trench capacitor in a substrate, with a field oxide layer on the substrate. The trench capacitor includes trenches extending into semiconductor material of the substrate, and a capacitor dielectric in the trenches on the semiconductor material. The trench capacitor further includes an electrically conductive trench-fill material on the capacitor dielectric. A portion of the capacitor dielectric extends into the field oxide layer, between a first segment of the field oxide layer over the trench-fill material and a second segment of the field oxide layer over the semiconductor material. The integrated trench capacitor has a trench contact to the trench-fill material in each of the trenches, and substrate contacts to the semiconductor material around the trenches, with no substrate contacts between the trenches.

Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistance

A pressure transducer includes a cavity, a first dipolar molecule disposed within the cavity, and a second dipolar molecule disposed within the cavity. The first dipolar molecule exhibits a quantum rotational state transition at a fixed frequency with respect to cavity pressure. The second dipolar molecule exhibits a quantum rotation state transition at a frequency that varies with cavity pressure.

Pressure sensing using quantum molecular rotational state transitions

An integrated circuit (IC) package includes an IC die and a wave channel that electrically couples the IC die to a solder ball array. The wave channel is configured to resonate at an operating frequency band of the IC die.

Millimeter wave integrated circuit with ball grid array package including transmit and receive channels

A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

The dominant frequency of a solidly mounted resonator () is substantially increased by reducing the thickness of each layer of each Bragg acoustic reflector () to have a thickness than is substantially equal to one-quarter of the wavelength of a frequency that is a higher harmonic resonant frequency of the fundamental resonant frequency of the solidly mounted resonator ().

Temperature compensated bulk acoustic wave resonator with a high coupling coefficient

A method forming packaged semiconductor devices includes providing a completed semiconductor package having a die with bond pads coupled to package pins. Sensor precursors including an ink and a liquid carrier are additively printed directly on the die or package to provide precursors for electrodes and a sensing material between the sensor electrodes. Sintering or curing removes the liquid carrier such that an ink residue remains to provide the sensor electrodes and sensing material. The sensor electrodes electrically coupled to the pins or bond pads or the die includes a wireless coupling structure coupled to the bond pads and the method includes additively printing an ink then sintering or curing to form a complementary wireless coupling structure on the completed semiconductor package coupled to the sensor electrodes so that sensing signals sensed by the sensor are wirelessly transmitted to the bond pads after being received by the wireless coupling structure.

Semiconductor package with printed sensor

Described examples include a millimeter wave atomic clock apparatus, chip scale vapor cell, and fabrication method in which a low pressure dipolar molecule gas is provided in a sealed cavity with a conductive interior surface forming a waveguide. Non-conductive apertures provide electromagnetic entrance to, and exit from, the cavity. Conductive coupling structures formed on an outer surface of the vapor cell near the respective non-conductive apertures couple an electromagnetic field to the interior of the cavity for interrogating the vapor cell using a transceiver circuit at a frequency that maximizes the rotational transition absorption of the dipolar molecule gas in the cavity to provide a reference clock signal for atomic clock or other applications.

Rotational transition based clock, rotational spectroscopy cell, and method of making same

A frequency reference device that includes a frequency reference generation unit to generate a frequency reference signal based on an absorption line of a gas.

IC, process, device generating frequency reference from RF gas absorption

Traditional photoacoustic sensors generally operate in a passive mode, which can degrade the performance. Here, however, a photoacoustic sensor has been disclosed that operates an acoustic resonance chamber and a transducer in an active mode so as to avoid the problems associated with traditional photoacoustic sensors; in particular, because the acoustic resonance chamber operates at near atmospheric pressure such as 100's Torr as opposed to 1 m Torr type of pressure for radio spectroscopy, the sensor is allowed to be scaled to operate on an integrated circuit or IC.

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Dallas, TX, United States of America

Django Trombley