Stmicroelectronics International N.v.

Stmicroelectronics S.a.

Divya Agarwal

Radhakrishnan Sithanandam

Jean Jimenez

Malathi Kar

Ghislain Troussier

Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection

Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit including a trigger actuated MOSFET device. Triggering of the MOSFET device is made in response to detection of either a positive ESD event or a negative ESD event.

Full swing positive to negative MOSFET supply clamp for electrostatic discharge (ESD) protection

Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.

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Divya Agarwal